Images are for reference only
2N7002,215
+BOMMOSFET N-CH 60V 300MA TO236AB
-
ManufacturerNexperia USA Inc.
-
Mfr. Part #2N7002,215
-
Datasheet 2N7002,215 DataSheet
-
Package SOT-23-3
-
In Stock6582
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 300mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 10 V |
| PowerDissipation(Max) | 830mW (Ta) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-236AB |
Overview
Description
The 2N7002,215 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification purposes in electronic circuits. It's part of the 2N7002 series, which is known for its small size and efficient performance, making it suitable for surface-mount technology (SMD) applications.
Key specifications include:
- Drain-Source Voltage (V_DS): Typically up to 60V, allowing it to handle moderate voltage levels.
- Continuous Drain Current (I_D): Approximately 200mA, suitable for low-power applications.
- On-state Resistance (R_DS(on)): Relatively low, which ensures minimal power loss when the transistor is fully on.
- Gate Threshold Voltage (V_GS(th)): Typically around 1-2V, providing ease of control with standard logic levels.
The 2N7002,215 is widely used in consumer electronics, automotive, and industrial applications for tasks such as switching loads, driving small motors, and interfacing with microcontrollers. Its SMD packaging (commonly SOT-23) makes it ideal for compact circuit designs.
Key specifications include:
- Drain-Source Voltage (V_DS): Typically up to 60V, allowing it to handle moderate voltage levels.
- Continuous Drain Current (I_D): Approximately 200mA, suitable for low-power applications.
- On-state Resistance (R_DS(on)): Relatively low, which ensures minimal power loss when the transistor is fully on.
- Gate Threshold Voltage (V_GS(th)): Typically around 1-2V, providing ease of control with standard logic levels.
The 2N7002,215 is widely used in consumer electronics, automotive, and industrial applications for tasks such as switching loads, driving small motors, and interfacing with microcontrollers. Its SMD packaging (commonly SOT-23) makes it ideal for compact circuit designs.
Equivalent
The 2N7002,215 is a type of N-channel MOSFET commonly used for switching applications. Equivalent products include:
1. BS170
2. BSS138
3. 2N7000
4. IRLML2502
5. FDN335N
These MOSFETs have similar electrical characteristics and can often be used interchangeably in circuits, though it’s important to verify specific parameters like voltage, current, and package type to ensure compatibility.
1. BS170
2. BSS138
3. 2N7000
4. IRLML2502
5. FDN335N
These MOSFETs have similar electrical characteristics and can often be used interchangeably in circuits, though it’s important to verify specific parameters like voltage, current, and package type to ensure compatibility.
Features
The 2N7002,215 is a small signal N-channel MOSFET commonly used in electronic circuits. Here are its key features:
1. Type: N-channel enhancement-mode MOSFET.
2. Voltage Rating: Typically, it has a drain-source voltage (V_DS) rating of 60V.
3. Current Rating: Can handle continuous drain current (I_D) of up to 200mA.
4. On-Resistance: Low on-state resistance (R_DS(on)), usually around 1.2Ω at V_GS = 10V.
5. Gate Threshold Voltage: Generally, between 1V and 2.5V.
6. Package: Commonly available in SOT-23 package, making it suitable for surface mount applications.
7. Temperature Range: Operates effectively over a wide temperature range, typically from -55°C to +150°C.
8. Switching Speed: Fast switching speed, making it suitable for high-speed applications.
9. Applications: Used in switching applications, level shifting, load switches, and more.
The 2N7002,215 is valued for its compact size and reliability in low-power applications.
1. Type: N-channel enhancement-mode MOSFET.
2. Voltage Rating: Typically, it has a drain-source voltage (V_DS) rating of 60V.
3. Current Rating: Can handle continuous drain current (I_D) of up to 200mA.
4. On-Resistance: Low on-state resistance (R_DS(on)), usually around 1.2Ω at V_GS = 10V.
5. Gate Threshold Voltage: Generally, between 1V and 2.5V.
6. Package: Commonly available in SOT-23 package, making it suitable for surface mount applications.
7. Temperature Range: Operates effectively over a wide temperature range, typically from -55°C to +150°C.
8. Switching Speed: Fast switching speed, making it suitable for high-speed applications.
9. Applications: Used in switching applications, level shifting, load switches, and more.
The 2N7002,215 is valued for its compact size and reliability in low-power applications.
Pinout
The 2N7002,215 is an N-channel MOSFET commonly used in electronic circuits for switching and amplification purposes. It comes in a compact SOT-23 package. The 2N7002 has three pins:
1. Gate (G): This is the control pin. A voltage applied here regulates the flow of current between the drain and source.
2. Source (S): This is the terminal through which the current enters the MOSFET.
3. Drain (D): This is the terminal through which the current exits the MOSFET.
The device is primarily used for low-level switching applications because it can be turned on or off by small changes in gate voltage. The 2N7002 is valued for its fast switching speed and is often employed in digital circuits, load switches, and level shifting applications. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of approximately 115mA, it's suitable for low-power applications.
1. Gate (G): This is the control pin. A voltage applied here regulates the flow of current between the drain and source.
2. Source (S): This is the terminal through which the current enters the MOSFET.
3. Drain (D): This is the terminal through which the current exits the MOSFET.
The device is primarily used for low-level switching applications because it can be turned on or off by small changes in gate voltage. The 2N7002 is valued for its fast switching speed and is often employed in digital circuits, load switches, and level shifting applications. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of approximately 115mA, it's suitable for low-power applications.
Manufacturer
The 2N7002,215 is manufactured by Nexperia. Nexperia is a global semiconductor company headquartered in Nijmegen, Netherlands. It specializes in the production of discrete and MOSFET components, logic devices, and analog & power ICs. The company was formed in 2017 as a spin-off from NXP Semiconductors and has a strong emphasis on efficiency, quality, and reliability. Nexperia's products are widely used in automotive, industrial, computing, and consumer electronics applications.
Application
The 2N7002 is an N-channel enhancement mode MOSFET commonly used in various electronic applications. Its key application areas include:
1. Switching Applications: Often used as a switch in low-voltage DC circuits due to its low on-resistance and fast switching speed.
2. Level Shifting: Suitable for level shifting in digital circuits, especially where TTL to CMOS logic level conversion is needed.
3. Load Drivers: Used for driving small loads like LEDs or relays in embedded systems.
4. Signal Amplification: Can be used in small-signal amplification circuits.
5. Battery-Operated Devices: Ideal for power management in battery-operated applications due to its low power consumption.
These applications benefit from the 2N7002's small package and efficient performance characteristics.
1. Switching Applications: Often used as a switch in low-voltage DC circuits due to its low on-resistance and fast switching speed.
2. Level Shifting: Suitable for level shifting in digital circuits, especially where TTL to CMOS logic level conversion is needed.
3. Load Drivers: Used for driving small loads like LEDs or relays in embedded systems.
4. Signal Amplification: Can be used in small-signal amplification circuits.
5. Battery-Operated Devices: Ideal for power management in battery-operated applications due to its low power consumption.
These applications benefit from the 2N7002's small package and efficient performance characteristics.
Package
The 2N7002,215 is a small-signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically packaged in a SOT-23 package. The SOT-23 is a standard surface-mount device (SMD) package offering a compact and efficient solution for various electronic applications.
