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2N7002DW
+BOMMOSFET 2N-CH 60V 0.115A SC88
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Manufactureronsemi
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Mfr. Part #2N7002DW
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In Stock6631
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Specifications
| Attribute | Value |
| Part Status | Active |
| Base Product Number | 2N7002 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 115mA |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Power - Max | 200mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88 (SC-70-6) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
The 2N7002DW is a type of N-channel MOSFET transistor commonly used in electronic circuits for switching and amplifying purposes. It is part of the 2N7002 series, which is favored for its compact SOT-363 dual package that includes two separate MOSFET transistors, making it highly suitable for space-constrained applications.
Key features of the 2N7002DW include a low ON-resistance, fast switching speed, and a maximum drain-source voltage (V_DS) of 60V. The maximum continuous drain current (I_D) is approximately 115 mA, making it ideal for low-power applications. It operates efficiently in both digital and analog circuits.
The 2N7002DW is used in a variety of applications such as LED drivers, power management, signal processing, and as a general-purpose switch in microcontrollers and other digital devices. Its versatility and reliability make it a popular choice in consumer electronics, automotive, and telecommunications industries.
Key features of the 2N7002DW include a low ON-resistance, fast switching speed, and a maximum drain-source voltage (V_DS) of 60V. The maximum continuous drain current (I_D) is approximately 115 mA, making it ideal for low-power applications. It operates efficiently in both digital and analog circuits.
The 2N7002DW is used in a variety of applications such as LED drivers, power management, signal processing, and as a general-purpose switch in microcontrollers and other digital devices. Its versatility and reliability make it a popular choice in consumer electronics, automotive, and telecommunications industries.
Equivalent
The 2N7002DW is a dual N-channel MOSFET commonly used for switching applications. Equivalent products include:
1. BSS84DW
2. SI2302DS
3. FDN327N
4. IRLML6344
5. PMV20XN
These equivalents offer similar electrical characteristics and are suitable substitutes in most applications. Always verify pin configuration and specific parameters to ensure compatibility.
1. BSS84DW
2. SI2302DS
3. FDN327N
4. IRLML6344
5. PMV20XN
These equivalents offer similar electrical characteristics and are suitable substitutes in most applications. Always verify pin configuration and specific parameters to ensure compatibility.
Features
The 2N7002DW is a dual N-channel MOSFET housed in a compact SOT-363 package. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of up to 200 mA.
2. On-Resistance: The device offers a low on-resistance, typically around 1.2 ohms at a gate-source voltage (V_GS) of 10V, which enhances efficiency.
3. Gate Threshold Voltage: Operates with a gate threshold voltage range of 1V to 2.5V, making it suitable for low-voltage applications.
4. Fast Switching: The MOSFET is designed for fast switching speeds, which are essential for high-speed pulse applications.
5. Low Gate Charge: It features a low gate charge, contributing to reduced power loss and efficient operation.
6. Thermal Resistance: It has good thermal characteristics, allowing for effective heat dissipation.
7. Applications: Commonly used in load switching, level shifting, and digital signal interfacing.
These features make the 2N7002DW ideal for compact, efficient, and cost-effective electronic designs.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 60V and can handle a continuous drain current (I_D) of up to 200 mA.
2. On-Resistance: The device offers a low on-resistance, typically around 1.2 ohms at a gate-source voltage (V_GS) of 10V, which enhances efficiency.
3. Gate Threshold Voltage: Operates with a gate threshold voltage range of 1V to 2.5V, making it suitable for low-voltage applications.
4. Fast Switching: The MOSFET is designed for fast switching speeds, which are essential for high-speed pulse applications.
5. Low Gate Charge: It features a low gate charge, contributing to reduced power loss and efficient operation.
6. Thermal Resistance: It has good thermal characteristics, allowing for effective heat dissipation.
7. Applications: Commonly used in load switching, level shifting, and digital signal interfacing.
These features make the 2N7002DW ideal for compact, efficient, and cost-effective electronic designs.
Pinout
The 2N7002DW is a dual N-channel MOSFET housed in a SOT-363 package. It has a pin count of 6. The pins are configured as follows:
1. Pin 1 (G1): Gate of the first MOSFET.
2. Pin 2 (S1): Source of the first MOSFET.
3. Pin 3 (D2): Drain of the second MOSFET.
4. Pin 4 (S2): Source of the second MOSFET.
5. Pin 5 (G2): Gate of the second MOSFET.
6. Pin 6 (D1): Drain of the first MOSFET.
The 2N7002DW is commonly used for switching applications and interfacing low-voltage digital signals with higher-voltage loads due to its capability to handle a maximum drain-source voltage of 60V and a continuous drain current of about 115mA per channel. Its compact size makes it suitable for space-constrained applications.
1. Pin 1 (G1): Gate of the first MOSFET.
2. Pin 2 (S1): Source of the first MOSFET.
3. Pin 3 (D2): Drain of the second MOSFET.
4. Pin 4 (S2): Source of the second MOSFET.
5. Pin 5 (G2): Gate of the second MOSFET.
6. Pin 6 (D1): Drain of the first MOSFET.
The 2N7002DW is commonly used for switching applications and interfacing low-voltage digital signals with higher-voltage loads due to its capability to handle a maximum drain-source voltage of 60V and a continuous drain current of about 115mA per channel. Its compact size makes it suitable for space-constrained applications.
Manufacturer
The 2N7002DW is manufactured by Nexperia. Nexperia is a global semiconductor company known for its expertise in producing discrete components, logic devices, and MOSFETs such as the 2N7002DW. Originally part of NXP Semiconductors, Nexperia became an independent entity in 2017. The company specializes in delivering efficient and high-performance semiconductor solutions primarily for the automotive, industrial, computing, consumer electronics, and communications sectors. Nexperia is known for its focus on operational excellence, high-volume production capabilities, and a commitment to innovation in the semiconductor industry.
Application
The 2N7002DW is a small-signal MOSFET commonly used in various electronic applications. Its key application areas include:
1. Switching Applications: Used in low-power switching circuits due to its fast switching speed.
2. Load Switching: Suitable for controlling small loads like LEDs and relays.
3. Signal Processing: Utilized in signal amplification and processing circuits.
4. Voltage Level Shifting: Converts voltage levels between different circuit sections.
5. Battery-Powered Devices: Ideal due to its low on-resistance and efficient power consumption.
6. Consumer Electronics: Found in devices like smartphones and tablets for power management functions.
These applications leverage the 2N7002DW's compact size, efficiency, and reliability in managing low power and voltage requirements.
1. Switching Applications: Used in low-power switching circuits due to its fast switching speed.
2. Load Switching: Suitable for controlling small loads like LEDs and relays.
3. Signal Processing: Utilized in signal amplification and processing circuits.
4. Voltage Level Shifting: Converts voltage levels between different circuit sections.
5. Battery-Powered Devices: Ideal due to its low on-resistance and efficient power consumption.
6. Consumer Electronics: Found in devices like smartphones and tablets for power management functions.
These applications leverage the 2N7002DW's compact size, efficiency, and reliability in managing low power and voltage requirements.
Package
The 2N7002DW is a dual N-channel MOSFET housed in a small SOT-363 surface-mount package. This package type is often used for compact, high-density circuit designs, providing efficient space utilization on PCBs.
