Images are for reference only
2N7002KDW
+BOMMOSFET 2N-CH 60V 0.115A SOT363
-
ManufacturerEVVO
-
Mfr. Part #2N7002KDW
-
In Stock9973
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| PartStatus | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 115mA (Ta) |
| RdsOn(Max)@Id,Vgs | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| InputCapacitance(Ciss)(Max)@Vds | 50pF @ 25V |
| Power-Max | 150mW (Ta) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| Package | 6-TSSOP, SC-88, SOT-363 |
| SupplierDevicePackage | SOT-363 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
This MOSFET is designed for enhanced performance in both analog and digital circuits, providing reliable operation in small-signal switching and amplification tasks. Its dual configuration enables designers to save space on PCB layouts while offering the flexibility to drive or switch multiple loads within the same package. Being part of the 2N7002 family, it also benefits from well-established documentation and support, making it easier for engineers to integrate it into their designs. The 2N7002KDW is appreciated for its robustness, efficiency, and versatility in power management and logic level shifting applications.
Equivalent
Features
1. Low On-Resistance: Offers low R_DS(on), enhancing efficiency by minimizing power loss during on-state.
2. High-Speed Switching: Supports fast switching speeds, making it suitable for applications requiring quick response times.
3. Voltage Rating: Typically has a drain-source voltage (V_DS) rating of 60V.
4. Current Handling: Capable of handling continuous drain current (I_D) up to a specified limit, often around 115mA per channel.
5. Compact Package: The SOT-363 package is designed for space-constrained applications, facilitating efficient use of PCB space.
6. Gate-Source Voltage: Supports a gate-source voltage (V_GS) of ±20V, allowing for compatibility with different control voltages.
7. Thermal Performance: Designed to operate efficiently over a wide temperature range.
These features make the 2N7002KDW suitable for use in various electronic devices, including consumer electronics, automotive systems, and other applications requiring compact and efficient switching solutions.
Pinout
The pin configuration is as follows:
- Pin 1: Source 1 (S1)
- Pin 2: Gate 1 (G1)
- Pin 3: Drain 2 (D2)
- Pin 4: Source 2 (S2)
- Pin 5: Gate 2 (G2)
- Pin 6: Drain 1 (D1)
The 2N7002KDW is commonly used for switching and amplification purposes in low-power applications. Each MOSFET operates with a low gate threshold voltage, making it suitable for interfacing with lower voltage logic levels. The compact package is ideal for space-constrained designs.
Manufacturer
Application
1. Switching Circuits: Ideal for general-purpose switching and digital signal processing.
2. Load and Power Management: Used in battery-powered devices for efficient power distribution.
3. Level Shifting: Employed in interfacing different logic level circuits.
4. Signal Amplification: Suitable for low-level signal amplification in RF applications.
5. Consumer Electronics: Integrated into smartphones, tablets, and portable gadgets.
6. Automotive Systems: Used in electronic control units and other vehicular electronics.
7. Industrial Control: Utilized in automation and robotic control systems.
These applications leverage its low on-resistance, fast switching speed, and compact package.