Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 115mA (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 7.5Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 25 V |
| PowerDissipation(Max) | 225mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Overview
Description
The 2N7002LT1G is a small-signal N-channel MOSFET designed for low-voltage, low-current applications. Key features include:
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Handling: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), making it suitable for 3V/5V logic.
- Low On-Resistance: ~5Ω (RDS(on)) at VGS = 10V.
- Package: SOT-23 (compact surface-mount).
Applications:
- Load switching in portable electronics.
- Signal amplification or level shifting.
- Low-power logic circuits.
Advantages:
- Low power consumption.
- Fast switching speed.
- Small footprint.
Limitations:
- Not for high-current/high-power use.
Ideal for battery-operated or space-constrained designs. Check datasheet for detailed specs.
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Handling: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), making it suitable for 3V/5V logic.
- Low On-Resistance: ~5Ω (RDS(on)) at VGS = 10V.
- Package: SOT-23 (compact surface-mount).
Applications:
- Load switching in portable electronics.
- Signal amplification or level shifting.
- Low-power logic circuits.
Advantages:
- Low power consumption.
- Fast switching speed.
- Small footprint.
Limitations:
- Not for high-current/high-power use.
Ideal for battery-operated or space-constrained designs. Check datasheet for detailed specs.
Equivalent
Equivalent products to the 2N7002LT1G (N-channel MOSFET, 60V, 115mA) include:
- BS170 (60V, 500mA)
- 2N7000 (60V, 200mA)
- BSS138 (50V, 220mA)
- DMG2302UX (20V, 3.7A, SOT-23)
- NDS7002A (60V, 280mA)
Check datasheets for exact specs and pin compatibility.
- BS170 (60V, 500mA)
- 2N7000 (60V, 200mA)
- BSS138 (50V, 220mA)
- DMG2302UX (20V, 3.7A, SOT-23)
- NDS7002A (60V, 280mA)
Check datasheets for exact specs and pin compatibility.
Features
The 2N7002LT1G is a N-channel MOSFET with the following key features:
- Voltage Rating: 60V (VDSS)
- Current Rating: 115mA (ID)
- Low Threshold Voltage: 1V (VGS(th))
- Low On-Resistance: 5Ω (RDS(on)) at VGS = 10V
- Fast Switching Speed: Ideal for low-power applications
- Small Package: SOT-23 (3-pin), space-efficient
- Low Power Consumption: Suitable for battery-operated devices
- RoHS Compliant: Lead-free and environmentally friendly
Commonly used in signal switching, load control, and logic-level applications.
- Voltage Rating: 60V (VDSS)
- Current Rating: 115mA (ID)
- Low Threshold Voltage: 1V (VGS(th))
- Low On-Resistance: 5Ω (RDS(on)) at VGS = 10V
- Fast Switching Speed: Ideal for low-power applications
- Small Package: SOT-23 (3-pin), space-efficient
- Low Power Consumption: Suitable for battery-operated devices
- RoHS Compliant: Lead-free and environmentally friendly
Commonly used in signal switching, load control, and logic-level applications.
Pinout
The 2N7002LT1G is a N-channel MOSFET in a SOT-23 package with 3 pins:
1. Gate (G) – Controls the switching (input).
2. Drain (D) – Connects to the load (output).
3. Source (S) – Ground reference.
Key Features:
- Low threshold voltage (~1V).
- 60V drain-source voltage (VDS).
- Continuous drain current (ID) of ~300mA.
- Used for low-power switching in circuits like logic level shifting, signal switching, and load control.
Compact and efficient for small-signal applications.
1. Gate (G) – Controls the switching (input).
2. Drain (D) – Connects to the load (output).
3. Source (S) – Ground reference.
Key Features:
- Low threshold voltage (~1V).
- 60V drain-source voltage (VDS).
- Continuous drain current (ID) of ~300mA.
- Used for low-power switching in circuits like logic level shifting, signal switching, and load control.
Compact and efficient for small-signal applications.
Application
The 2N7002LT1G is a small-signal N-channel MOSFET commonly used in:
1. Switching Circuits – Low-power load switching in digital/logic circuits.
2. Signal Amplification – Small-signal amplification in audio/RF applications.
3. Protection Circuits – Reverse polarity/ESD protection.
4. Interface Circuits – Level shifting between logic families (e.g., 3.3V ↔ 5V).
5. Portable Electronics – Power management in battery-operated devices.
Its low threshold voltage, compact SOT-23 package, and efficiency make it ideal for space-constrained, low-power designs.
1. Switching Circuits – Low-power load switching in digital/logic circuits.
2. Signal Amplification – Small-signal amplification in audio/RF applications.
3. Protection Circuits – Reverse polarity/ESD protection.
4. Interface Circuits – Level shifting between logic families (e.g., 3.3V ↔ 5V).
5. Portable Electronics – Power management in battery-operated devices.
Its low threshold voltage, compact SOT-23 package, and efficiency make it ideal for space-constrained, low-power designs.
Package
The 2N7002LT1G is available in a SOT-23 surface-mount package. This compact, 3-pin package is widely used for small-signal transistors, offering good thermal and electrical performance in a minimal footprint. It's suitable for automated PCB assembly and space-constrained applications.
