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2SB1184
+BOM-
ManufacturerRohm Semiconductor
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Mfr. Part #2SB1184
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In Stock3368
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Specifications
| Attribute | Value |
| Mounting Type | SMD/SMT |
| Package / Case | TO-252-3 |
| Brand | ROHM Semiconductor |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Technology | Si |
| Transistor Polarity | PNP |
| Configuration | Single |
| Maximum DC Collector Current | 3 A |
| Collector - Emitter Voltage VCEO Max | 50 V |
| DC Collector / Base Gain hfe Min | 82 |
| Part # Aliases | 2SB1184TL |
| DC Current Gain h FE Max | 390 |
Overview
Description
The device is often employed in power supplies, motor control, and DC-DC converters due to its fast switching speed and high input impedance. 2SB1184 typically comes in a compact package, facilitating easy integration into circuit designs. Its high breakdown voltage and robust thermal characteristics make it suitable for demanding environments.
When using 2SB1184, engineers must consider parameters such as gate threshold voltage, continuous drain current, and thermal resistance to ensure optimal performance in specific applications. Overall, 2SB1184 is a reliable choice for designers seeking efficiency and robustness in their electronic systems.
Equivalent
Features
1. Type: NPN transistor.
2. Voltage Rating: Collector-emitter voltage (Vce) up to 80V, enabling it to handle significant voltage levels.
3. Current Rating: Maximum collector current (Ic) of around 2A, suitable for medium-power applications.
4. Gain: High current gain (hFE) ranging from 20 to 160, allowing efficient amplification.
5. Package: Available in TO-220 or similar packages, facilitating easy mounting and heat dissipation.
6. Frequency: Transition frequency (fT) around 100MHz, suitable for high-frequency applications.
7. Thermal Resistance: Low thermal resistance, which helps manage heat generation during operation.
This transistor is frequently used in audio amplifiers, power supplies, and various electronic circuits requiring reliable switching and amplification.
Pinout
Pin functions are as follows:
1. Emitter (E): This is the terminal through which the current flows out. In PNP transistors, current flows from the emitter to the base.
2. Base (B): This terminal controls the transistor's operation. A small current entering the base allows a larger current to flow from the emitter to the collector.
3. Collector (C): This is the terminal through which the current enters the transistor. In a PNP transistor, current flows from the collector to the emitter when the base is activated.
The 2SB1184 is often used in low to medium power applications, with a maximum collector current rating of around 8A and a collector-emitter voltage of up to 60V.
Manufacturer
Founded in 1999, ON Semiconductor has grown through a series of acquisitions and is known for its commitment to sustainable practices and technological advancement. The 2SB1184 transistor, like many of their products, is used in applications such as audio amplification, switching, and signal processing.
Apart from ON Semiconductor, other manufacturers may also produce the 2SB1184, so it’s advisable to check specific datasheets for detailed specifications and sourcing information.