2SC2881-Y

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2SC2881-Y

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Specifications

Attribute Value
Manufacturer Foshan Blue Rocket Elec
Package / Case SOT-89-3
Pd - Power Dissipation 500mW
type NPN
Current - Collector(Ic) 800mA
Collector - Emitter Voltage VCEO 120V
Transition frequency(f T) 120MHz
Current - Collector Cutoff 100nA
DC Current Gain 120@100mA,5V

Overview

Description

The 2SC2881-Y is a high-frequency NPN silicon transistor designed for RF amplification in VHF/UHF bands. Key features include:
- Frequency Range: Up to 1 GHz
- Power Output: ~1W (typical)
- Voltage Rating: 20V (Vceo)
- Current: 150mA (Ic max)
- Gain (hFE): 40–200
Commonly used in RF amplifiers, oscillators, and communication equipment, it offers stable performance in high-frequency circuits. The "-Y" suffix may denote a specific variant or grading.
For precise usage, refer to the datasheet for bias, thermal, and layout guidelines.

Equivalent

The 2SC2881-Y is an NPN RF transistor. Equivalent or similar replacements include:
- 2SC2630
- 2SC3356
- 2SC3357
- BFG591 (SMD alternative)
- MRF237
Check datasheets for exact specs (frequency, power, gain). Some may require minor circuit adjustments.

Manufacturer

The 2SC2881-Y is a high-frequency transistor manufactured by Toshiba, a well-known Japanese multinational conglomerate specializing in electronics and semiconductors. Toshiba is recognized for producing a wide range of electronic components, including power transistors, ICs, and memory devices. The company has a strong reputation in the semiconductor industry for reliability and innovation.
The 2SC2881-Y is typically used in RF amplification applications, such as in radio transmitters and communication equipment. Toshiba's semiconductor division (now part of Kioxia for memory products and other spin-offs) has historically been a key player in power and high-frequency devices.