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2SC4672T100Q
+BOMTRANS NPN 50V 2A MPT3
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ManufacturerRohm Semiconductor
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Mfr. Part #2SC4672T100Q
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Datasheet 2SC4672T100Q DataSheet
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Package TO-243AA
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In Stock8685
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Specifications
| Attribute | Value |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 2 A |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Vce Saturation(Max) @ Ib Ic | 350mV @ 50mA, 1A |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 120 @ 500mA, 2V |
| Power - Max | 500 mW |
| Frequency - Transition | 210MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
Key specifications include:
- Collector-Emitter Voltage (Vceo): This transistor typically has a maximum voltage rating that indicates the maximum voltage it can handle between the collector and emitter terminals when the base is open.
- Collector Current (Ic): It is designed to handle a specific maximum continuous collector current.
- Gain (hFE): The current gain, or hFE, of the 2SC4672T100Q, is usually within a certain range, providing adequate amplification for most standard applications.
- Package Type: Often found in a TO-92 or similar package, making it suitable for through-hole design.
The 2SC4672T100Q is widely used in audio amplifiers, signal processing units, and other consumer electronic devices due to its balance of performance and cost-effectiveness. When designing circuits with this transistor, be sure to consult its datasheet for specific parameters and ratings to ensure optimal performance and device longevity.
Equivalent
Features
1. Package Type: Typically available in a small, surface-mount SOT-23 package, making it suitable for compact and lightweight designs.
2. Collector-Emitter Voltage (Vceo): Its maximum collector-emitter voltage is around 50V, which indicates the maximum voltage it can handle between the collector and emitter.
3. Collector Current (Ic): The maximum collector current is usually around 100mA, defining the maximum current it can switch or amplify.
4. Gain (hFE): This transistor often has a DC current gain ranging from 200 to 400, impacting its ability to amplify input signals.
5. Frequency: Designed to operate at high frequencies, the transistor can handle frequencies up to several MHz, making it ideal for RF applications.
6. Thermal and Power Considerations: The device has a power dissipation capacity of approximately 150mW, and proper heat management is essential to prevent overheating.
These specifications make the 2SC4672T100Q suitable for various low-power and high-frequency applications.
Pinout
1. Collector (C)
2. Base (B)
3. Emitter (E)
These pins are used to control and amplify electrical signals. The base is the control pin that regulates the current between the collector and emitter. When a small current is applied to the base, it allows a larger current to flow from the collector to the emitter, thereby amplifying the signal. This transistor is generally used in electronic circuits for amplification and switching purposes.
Manufacturer
Application
1. Signal Amplification: It is used in audio and radio frequency amplification circuits due to its ability to amplify weak electrical signals.
2. Switching Applications: Utilized in electronic circuits for switching purposes, controlling current flow in power supplies and motor controllers.
3. Oscillator Circuits: Employed in oscillator designs for generating clock signals in timing applications.
4. General Purpose Circuits: Suitable for use in various general-purpose electronic circuits, including those in consumer electronics.
These applications leverage the transistor's characteristics like low noise and high gain.