Specifications
| Attribute | Value |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown(Max) | 160 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 140 @ 100mA, 5V |
| Power - Max | 1 W |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
