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AON7380
+BOMMOSFET N-CH 30V 24A 8DFN
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ManufacturerAlpha & Omega Semiconductor Inc.
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Mfr. Part #AON7380
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Datasheet AON7380 DataSheet
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Package VDFN-8
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In Stock5357
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR) |
| Series | AlphaMOS |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 24A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.8mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 825 pF @ 15 V |
| Power Dissipation (Max) | 4.1W (Ta), 24W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN-EP (3x3) |
Overview
Description
Key specifications typically include a low gate charge and fast switching speeds, making it suitable for high-frequency applications. The device is often packaged in the compact DFN (Dual Flat No-lead) package, which provides effective thermal performance and space savings on printed circuit boards (PCBs).
The MOSFET is designed to handle medium to high current loads and is optimized for both performance and reliability. Its robust design can withstand various stresses, making it suitable for demanding environments. By incorporating the AON7380, designers can achieve efficient power conversion and management, essential for modern electronic devices requiring compact and reliable power solutions.
Equivalent
1. IRF540N
2. FQP30N06L
3. STP55NF06 from STMicroelectronics
4. NTD4906N from ON Semiconductor
Ensure the replacement matches the AON7380 in terms of Vds, Id, Rds(on), and package type for compatibility in your specific application. Always refer to the datasheets for precise specifications.
Features
1. Type: N-channel MOSFET, suitable for switching and amplifying electronic signals.
2. Voltage Rating: Typically supports a maximum drain-source voltage (V_DS) of around 30V.
3. Current Rating: Can handle continuous drain current (I_D) up to approximately 60A under specific conditions.
4. R_DS(on): Features a low on-state resistance, which minimizes power loss and improves efficiency.
5. Package: Available in a MOSFET package like DFN or SOIC, optimized for thermal performance and compact design.
6. Thermal Performance: Designed to dissipate heat efficiently, allowing for operation at high currents.
7. Applications: Commonly used in DC-DC converters, motor drives, and other power management systems.
8. Efficiency: Prioritizes low power loss and high-speed switching to enhance overall system performance.
These features make the AON7380 suitable for high-efficiency applications in various electronic devices.
Pinout
Here is a brief overview of its pin functions:
1. Source 1 (S1): Connected to the source terminal of the first MOSFET.
2. Gate 1 (G1): Connected to the gate terminal of the first MOSFET.
3. Drain 1 (D1): Connected to the drain terminal of the first MOSFET.
4. Source 2 (S2): Connected to the source terminal of the second MOSFET.
5. Gate 2 (G2): Connected to the gate terminal of the second MOSFET.
6. Drain 2 (D2): Connected to the drain terminal of the second MOSFET.
7-8. Common Drain (D): These pins are internally connected to the drain of both MOSFETs and typically connected externally for heat dissipation.
The AON7380 is primarily used in applications that require efficient load switching and power management.