APT20M19JVR

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APT20M19JVR

+BOM

MOSFET N-CH 200V 112A ISOTOP

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Specifications

Attribute Value
Supplier Microchip Technology
Package / Case Tube
Series POWER MOS V®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 112A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 19mOhm @ 500mA, 10V
Vgs(th)(Max) @ Id 4V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 495 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 11640 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package ISOTOP®

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