| Attribute |
Value |
| Supplier |
Microchip Technology |
| Package / Case |
Tube |
| Series |
POWER MOS 7® |
| Part Status |
Active |
| IGBT Type |
PT |
| Voltage - Collector Emitter Breakdown(Max) |
1200 V |
| Current - Collector(Ic)(Max) |
69 A |
| Current - Collector Pulsed(Icm) |
90 A |
| Vce(on)(Max) @ Vge Ic |
3.9V @ 15V, 25A |
| Power - Max |
417 W |
| Switching Energy |
500µJ (on), 440µJ (off) |
| Input Type |
Standard |
| Gate Charge |
110 nC |
| Td(on / off) @ 25°C |
12ns/70ns |
| Test Condition |
600V, 25A, 5Ohm, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
