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APTC80H29T1G
+BOMMOSFET 4N-CH 800V 15A SP1
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ManufacturerMicrosemi Corporation
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Mfr. Part #APTC80H29T1G
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Datasheet APTC80H29T1G DataSheet
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Package SP-1
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In Stock6048
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Specifications
| Attribute | Value |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Obsolete |
| FET Type | 4 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain(Id) @ 25°C | 15A |
| Rds On(Max) @ Id Vgs | 290mOhm @ 7.5A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 90nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 2254pF @ 25V |
| Power - Max | 156W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
