APTM100H35FT3G

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APTM100H35FT3G

+BOM

MOSFET 4N-CH 1000V 22A SP3

  • ManufacturerMicrochip Technology

  • Mfr. Part #APTM100H35FT3G

  • Package SP-3

  • In Stock5275

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Specifications

Attribute Value
Supplier Microchip Technology
Package / Case Bulk
Part Status Active
FET Type 4 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain(Id) @ 25°C 22A
Rds On(Max) @ Id Vgs 420mOhm @ 11A, 10V
Vgs(th)(Max) @ Id 5V @ 2.5mA
Gate Charge(Qg)(Max) @ Vgs 186nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 5200pF @ 25V
Power - Max 390W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount

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