APTM120A65FT1G

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APTM120A65FT1G

+BOM

MOSFET 2N-CH 1200V 16A SP1

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Specifications

Attribute Value
Supplier Microchip Technology
Package / Case Bulk
Part Status Obsolete
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain(Id) @ 25°C 16A
Rds On(Max) @ Id Vgs 780mOhm @ 14A, 10V
Vgs(th)(Max) @ Id 5V @ 2.5mA
Gate Charge(Qg)(Max) @ Vgs 300nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 7736pF @ 25V
Power - Max 390W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount

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