APTM50H15FT1G

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APTM50H15FT1G

+BOM

MOSFET 4N-CH 500V 25A SP1

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Specifications

Attribute Value
Supplier Microchip Technology
Package / Case Bulk
Part Status Active
FET Type 4 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain(Id) @ 25°C 25A
Rds On(Max) @ Id Vgs 180mOhm @ 21A, 10V
Vgs(th)(Max) @ Id 5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 170nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 5448pF @ 25V
Power - Max 208W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount

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