| Attribute |
Value |
| Supplier |
Microchip Technology |
| Package / Case |
Bulk |
| Part Status |
Active |
| FET Type |
4 N-Channel (Three Level Inverter) |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C |
219A (Tc) |
| Rds On(Max) @ Id Vgs |
12mOhm @ 150A, 20V |
| Vgs(th)(Max) @ Id |
2.4V @ 30mA (Typ) |
| Gate Charge(Qg)(Max) @ Vgs |
483nC @ 20V |
| Input Capacitance(Ciss)(Max) @ Vds |
8400pF @ 1000V |
| Power - Max |
925W |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Chassis Mount |
