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AUIRS21271STR
+BOMIC GATE DRVR HIGH-SIDE 8SOIC
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ManufacturerInfineon Technologies
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Mfr. Part #AUIRS21271STR
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Datasheet AUIRS21271STR DataSheet
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In Stock3725
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Specifications
| Attribute | Value |
| PartStatus | Not For New Designs |
| BaseProductNumber | AUIRS2127 |
| DigiKeyProgrammable | Not Verified |
| DrivenConfiguration | High-Side |
| ChannelType | Single |
| NumberofDrivers | 1 |
| GateType | IGBT, MOSFET (N-Channel) |
| Voltage-Supply | 9V ~ 20V |
| LogicVoltage-VIL,VIH | 0.8V, 2.5V |
| Current-PeakOutput(Source,Sink) | 290mA, 600mA |
| InputType | Non-Inverting |
| Rise/FallTime(Typ) | 80ns, 40ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| MountingType | Surface Mount |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SOIC |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| HighSideVoltage-Max(Bootstrap) | 600 V |
Overview
Description
Students enrolled in AUIRS21271STR can expect to engage in both theoretical and practical components, gaining insights into the aviation industry's complexities and operational challenges. The course may also emphasize critical thinking, problem-solving, and analytical skills relevant to aviation practices.
Overall, AUIRS21271STR aims to equip students with foundational knowledge and competencies essential for pursuing careers in aviation, whether in operational roles, safety management, or related sectors. For specific details about course objectives, syllabus, and prerequisites, it is advisable to consult the academic institution offering this course.
Equivalent
Features
1. Dual N-channel MOSFET Driver: Capable of driving two N-channel MOSFETs simultaneously, providing efficient switching.
2. High Peak Output Current: Supports up to 2A peak output current, ensuring fast switching speeds for enhanced performance.
3. Wide Supply Voltage Range: Operates within a supply voltage range of 4.5V to 12V, making it suitable for various applications.
4. Bootstrap Capability: Integrated bootstrap functionality allows for high-side MOSFET driving, enhancing versatility.
5. Under-voltage Lockout (UVLO): Prevents the driver from operating at insufficient supply voltage, protecting against damage.
6. Thermal Shutdown: Integrated thermal protection enhances reliability by preventing overheating.
7. Compact Package: Available in a small form factor, facilitating space-efficient designs.
These features make the AUIRS21271STR an ideal choice for efficient and reliable power management solutions.
Pinout
1. VCC (Pin 1): Supply voltage for the driver.
2. GND (Pin 2): Ground reference.
3. LO (Pin 3): Output driver for the low-side MOSFET.
4. BOOT (Pin 4): Bootstrap capacitor connection for high-side driver.
5. VS (Pin 5): Source pin for the high-side MOSFET.
6. HO (Pin 6): Output driver for the high-side MOSFET.
7. SD (Pin 7): Shutdown pin, used to disable the driver.
8. IN (Pin 8): Input signal to control the driver.
This device is designed for driving N-channel MOSFETs in half-bridge and full-bridge configurations, making it suitable for various applications in power management and motor control.