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BAS21H
+BOM250V INDEPENDENT TYPE 1.25V@200M
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ManufacturerShenzhen Slkormicro Semicon Co., Ltd.
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Mfr. Part #BAS21H
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In Stock6817
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Specifications
| Attribute | Value |
| Part Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 250 V |
| Current - Average Rectified (Io) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 200 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Current - Reverse Leakage @ Vr | 100 nA @ 200 V |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package | SC-76, SOD-323 |
| Supplier Device Package | SOD-323 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| Reverse Recovery Time (trr) | 50 ns |
Overview
Description
BAS21H typically refers to an introductory BAS course (e.g., in the Bachelor of Administrative Studies) at some universities. It’s designed to orient new BAS students to the program: explaining degree structure, core requirements, electives, academic policies, and campus resources; it may also include study-skills guidance and an overview of career pathways. Prerequisites vary by institution. For exact topics, credits, delivery method, and assessment (assignments, quizzes, participation, exams), check your university’s BAS21H course outline. If you share the specific university, I can give the precise syllabus and learning outcomes.
Equivalent
BAS21H is a high‑gain, NPN small‑signal transistor in SOT‑23. Common equivalents (SMD) you can use are:
- MMBT3904 (NPN, SOT‑23)
- BC847B (NPN, SOT‑23)
- BC847A (NPN, SOT‑23)
- MMBT3904W (vendor variant)
Thru‑hole equivalent: 2N3904 (with appropriate package)
Note: check gain (hFE), Vce, and pinout to ensure compatibility.
- MMBT3904 (NPN, SOT‑23)
- BC847B (NPN, SOT‑23)
- BC847A (NPN, SOT‑23)
- MMBT3904W (vendor variant)
Thru‑hole equivalent: 2N3904 (with appropriate package)
Note: check gain (hFE), Vce, and pinout to ensure compatibility.
Features
BAS21H is a high‑voltage, small‑signal NPN transistor (BJT) in SOT‑23. Key features:
- NPN, general‑purpose small‑signal switching/amplification
- High‑voltage variant (H): Vceo ≈ 60–75 V
- Collector current: up to ~100–150 mA
- High current gain (hFE): ~100–500 depending on Ic
- Transition frequency (ft): in the hundreds of MHz (typical RF usefulness)
- Package: SOT‑23, surface‑mount, RoHS/compliant
- Wide operating temperature: roughly −55 to +150 °C
- Suitable for switching, level shifting, and RF/preamp applications
Note: exact specifications vary by manufacturer and lot; always check the specific datasheet for precise ratings.
- NPN, general‑purpose small‑signal switching/amplification
- High‑voltage variant (H): Vceo ≈ 60–75 V
- Collector current: up to ~100–150 mA
- High current gain (hFE): ~100–500 depending on Ic
- Transition frequency (ft): in the hundreds of MHz (typical RF usefulness)
- Package: SOT‑23, surface‑mount, RoHS/compliant
- Wide operating temperature: roughly −55 to +150 °C
- Suitable for switching, level shifting, and RF/preamp applications
Note: exact specifications vary by manufacturer and lot; always check the specific datasheet for precise ratings.
Pinout
Pin count: 3 (SOT-23 package).
Function: BAS21H is a dual silicon high-speed switching diode with a common cathode (anodes on pins 1 and 2; cathode on pin 3). Used for fast signal switching, clamping, and OR-ing in small-signal circuits.
Function: BAS21H is a dual silicon high-speed switching diode with a common cathode (anodes on pins 1 and 2; cathode on pin 3). Used for fast signal switching, clamping, and OR-ing in small-signal circuits.
Manufacturer
Manufacturer: Nexperia (formerly Philips Semiconductors/NXP Semiconductors).
What kind of company: A Dutch multinational semiconductor company that designs and manufactures discrete semiconductors (e.g., diodes, transistors), as well as related electronic components.
What kind of company: A Dutch multinational semiconductor company that designs and manufactures discrete semiconductors (e.g., diodes, transistors), as well as related electronic components.
Application
BAS21H is a small‑signal, high‑frequency NPN transistor. Common application areas include:
- RF/IF amplifier stages and front-ends in receivers and transceivers
- High‑frequency switching and driving stages
- Buffer/driver or preamplifier stages in analog/digital circuits
- Mixers, demodulators, and oscillator circuits in communications gear
- General-purpose amplification and biasing in test equipment and consumer electronics
Concise and suitable for general use in high‑frequency small‑signal roles.
- RF/IF amplifier stages and front-ends in receivers and transceivers
- High‑frequency switching and driving stages
- Buffer/driver or preamplifier stages in analog/digital circuits
- Mixers, demodulators, and oscillator circuits in communications gear
- General-purpose amplification and biasing in test equipment and consumer electronics
Concise and suitable for general use in high‑frequency small‑signal roles.
Package
BAS21H is a surface-mount switching diode packaged in SOT-23.
