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BAS521LP-7
+BOMDIODE STD 325V 400MA X1DFN10062
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ManufacturerDiodes Incorporated
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Mfr. Part #BAS521LP-7
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Datasheet BAS521LP-7 DataSheet
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In Stock2637
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Specifications
| Attribute | Value |
| Part Status | Obsolete |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 325 V |
| Current - Average Rectified (Io) | 400mA |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 100 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 150 nA @ 250 V |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 0402 (1006 Metric) |
| Supplier Device Package | X1-DFN1006-2 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Base Product Number | BAS521 |
| Reverse Recovery Time (trr) | 50 ns |
Overview
Description
Equivalent
Features
1. Low On-Resistance: Offers low R_DS(on) for efficient performance, reducing power loss in applications.
2. Low Gate Threshold Voltage: Ensures easy driving with minimal gate voltage, making it suitable for battery-operated devices.
3. Fast Switching Speed: Capable of rapid switching, enhancing performance in high-frequency applications.
4. Compact Package: Typically available in a small SOT-23 package, allowing for space-saving designs.
5. High Drain-Source Voltage: Supports voltage ratings suitable for various applications including power management and motor control.
6. Thermal Stability: Provides reliable operation across a range of temperatures, ensuring durability under different environmental conditions.
This MOSFET is ideal for applications in mobile devices, portable electronics, and various power management systems.
Pinout
Pin Configuration:
1. Anode 1: Connects to the first Schottky diode's anode.
2. Cathode 1: Connects to the first Schottky diode's cathode.
3. Anode 2: Connects to the second Schottky diode's anode.
Function: The BAS521LP-7 is designed for high-speed switching applications and low forward voltage drop, making it suitable for rectification and signal clamping in various electronic circuits. It offers efficient performance in applications such as power management and RF systems.
The diodes are typically rated for a maximum reverse voltage of 30V and a forward current of 200mA, with a low forward voltage drop, enhancing their efficiency in circuit designs.