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BAV99LT3G
+BOMDIODE ARRAY GP 100V 215MA SOT23
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Manufactureronsemi
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Mfr. Part #BAV99LT3G
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Datasheet BAV99LT3G DataSheet
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Package TO-236-3
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In Stock12125
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Specifications
| Attribute | Value |
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Series Connection |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 100 V |
| Current-AverageRectified(Io)(perDiode) | 215mA (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.25 V @ 150 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 6 ns |
| Current-ReverseLeakage@Vr | 2.5 µA @ 70 V |
| OperatingTemperature-Junction | -65°C ~ 150°C |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Overview
Description
Key features of the BAV99LT3G include a high switching speed, low forward voltage drop, and low leakage current, which make it efficient for high-frequency applications. It contains two diodes in a series configuration, allowing for versatile usage in various circuit designs. The device typically handles a maximum repetitive peak reverse voltage (VRRM) of 70 volts and a continuous forward current (IF) of around 200 mA per diode.
The BAV99LT3G is often used in telecommunications, computing, and consumer electronics for tasks such as voltage clamping, signal routing, and noise suppression. Its reliability and small size make it a popular choice for designers looking to save space without compromising performance in compact electronic devices.
Equivalent
Features
1. Configuration: It consists of two diodes in a series configuration, suitable for high-speed switching applications.
2. Package: Available in an SOT-23 package, which is compact and suitable for space-constrained applications.
3. Reverse Voltage: The maximum reverse voltage is typically around 70V.
4. Forward Current: Capable of handling a continuous forward current of about 200mA.
5. Power Dissipation: It has a total power dissipation of around 225mW.
6. Fast Switching: Known for fast switching speeds, making it ideal for digital and switching applications.
7. Low Capacitance: Features low capacitance, enhancing performance in high-frequency applications.
8. Temperature Range: It operates in a temperature range of -55°C to +150°C, ensuring reliability in various environments.
9. Compliance: It is RoHS compliant, reflecting adherence to environmental and safety standards.
These features make the BAV99LT3G suitable for applications in signal processing, RF systems, and general-purpose switching.
Pinout
1. Pin 1 (Anode 1, A1): The anode of the first diode.
2. Pin 2 (Anode 2, A2): The anode of the second diode.
3. Pin 3 (Common Cathode, K): The cathode shared by both diodes.
The BAV99LT3G is used for fast switching applications, clamping, and protection purposes in electronic circuits. Its dual diode configuration allows it to be used in various applications, such as signal rectification or as part of a voltage multiplier.
Manufacturer
Application
1. Signal Switching: Used in digital and analog circuits for fast switching operations.
2. Rectification: Employed in circuits requiring low current rectification.
3. Voltage Clamping: Protects sensitive components by clamping voltage spikes.
4. High-Frequency Applications: Suitable for RF and high-speed data circuits due to its low capacitance and fast switching speed.
5. Level Shifting: Facilitates level shifting in mixed-voltage environments.
6. Protection Circuits: Acts in protective circuits to safeguard against overvoltage conditions.
These features make it ideal for use in consumer electronics, communication devices, and automotive systems.