Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 100 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 65 V |
| VceSaturation(Max)@IbIc | 600mV @ 5mA, 100mA |
| Current-CollectorCutoff(Max) | 15nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 200 @ 2mA, 5V |
| Power-Max | 150 mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SC-70, SOT-323 |
Overview
Description
The BC846BWT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in electronic circuits for switching and amplification purposes. Manufactured by ON Semiconductor, it is part of the BC846 series, known for its reliability and efficiency in low-power applications.
The key specifications of the BC846BWT1G include:
- Maximum Collector Current (Ic): 100 mA
- Maximum Collector-Emitter Voltage (Vce): 65 V
- Maximum Collector-Base Voltage (Vcb): 80 V
- Maximum Emitter-Base Voltage (Veb): 6 V
- Power Dissipation (Pd): 300 mW
- Transition Frequency (fT): Approximately 100 MHz
This transistor comes in a compact SOT-323 package, suitable for surface-mount technology (SMT), making it ideal for compact, high-density circuit designs. The BC846BWT1G is often used in applications such as signal amplification, switching, and as an electronic switch in various consumer electronics, automotive, and industrial controls. Its small size, combined with its capability to handle moderate current and voltage levels, makes it a versatile choice for designers.
The key specifications of the BC846BWT1G include:
- Maximum Collector Current (Ic): 100 mA
- Maximum Collector-Emitter Voltage (Vce): 65 V
- Maximum Collector-Base Voltage (Vcb): 80 V
- Maximum Emitter-Base Voltage (Veb): 6 V
- Power Dissipation (Pd): 300 mW
- Transition Frequency (fT): Approximately 100 MHz
This transistor comes in a compact SOT-323 package, suitable for surface-mount technology (SMT), making it ideal for compact, high-density circuit designs. The BC846BWT1G is often used in applications such as signal amplification, switching, and as an electronic switch in various consumer electronics, automotive, and industrial controls. Its small size, combined with its capability to handle moderate current and voltage levels, makes it a versatile choice for designers.
Equivalent
The BC846BWT1G is a NPN Bipolar Junction Transistor (BJT). Equivalent products include the BC846B, BC847B, and BC848B. These transistors share similar electrical characteristics but may differ in packaging or specific manufacturer ratings. Always verify the specifications, such as voltage, current, and packaging, to ensure compatibility with your application.
Features
The BC846BWT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for use in various electronic circuits. Key features include:
1. Voltage Rating: Maximum collector-emitter voltage (Vceo) of 65V.
2. Current Rating: Collector current (Ic) up to 100mA.
3. Power Dissipation: Maximum power dissipation of 150mW.
4. Gain: DC current gain (hFE) typically ranges from 200 to 450 for the B variant.
5. Package: Available in the SOT-323 (SC-70) surface-mount package, providing a compact form factor suitable for space-constrained applications.
6. Transition Frequency: High transition frequency of approximately 100MHz, making it suitable for high-speed switching applications.
7. Temperature Range: Operating junction temperature range from -55°C to +150°C.
8. Low Noise: Designed to operate with low noise levels, enhancing performance in analog circuits.
These features make the BC846BWT1G suitable for amplification and switching applications in consumer electronics, industrial equipment, and communication devices.
1. Voltage Rating: Maximum collector-emitter voltage (Vceo) of 65V.
2. Current Rating: Collector current (Ic) up to 100mA.
3. Power Dissipation: Maximum power dissipation of 150mW.
4. Gain: DC current gain (hFE) typically ranges from 200 to 450 for the B variant.
5. Package: Available in the SOT-323 (SC-70) surface-mount package, providing a compact form factor suitable for space-constrained applications.
6. Transition Frequency: High transition frequency of approximately 100MHz, making it suitable for high-speed switching applications.
7. Temperature Range: Operating junction temperature range from -55°C to +150°C.
8. Low Noise: Designed to operate with low noise levels, enhancing performance in analog circuits.
These features make the BC846BWT1G suitable for amplification and switching applications in consumer electronics, industrial equipment, and communication devices.
Pinout
The BC846BWT1G is a NPN Bipolar Junction Transistor (BJT). It typically comes in a SOT-323 (SC-70) surface mount package, which has three pins. The pin configuration and functions are as follows:
1. Pin 1 (Base): This pin is used to control the transistor. A small current or voltage applied to the base controls the larger current flow between the collector and emitter.
2. Pin 2 (Emitter): This is the pin through which the current leaves the transistor. It is usually connected to the ground or a negative voltage in NPN transistors.
3. Pin 3 (Collector): This pin is connected to the load. The current flows from the collector to the emitter when the transistor is in the "on" state.
In summary, the BC846BWT1G is a 3-pin device where each pin serves a specific function: base for control, emitter for current flow out, and collector for current flow in from the load.
1. Pin 1 (Base): This pin is used to control the transistor. A small current or voltage applied to the base controls the larger current flow between the collector and emitter.
2. Pin 2 (Emitter): This is the pin through which the current leaves the transistor. It is usually connected to the ground or a negative voltage in NPN transistors.
3. Pin 3 (Collector): This pin is connected to the load. The current flows from the collector to the emitter when the transistor is in the "on" state.
In summary, the BC846BWT1G is a 3-pin device where each pin serves a specific function: base for control, emitter for current flow out, and collector for current flow in from the load.
Manufacturer
The BC846BWT1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components used in various electronic devices. The company provides products and solutions for automotive, industrial, cloud, medical, and consumer applications, focusing on power and signal management, logic, discrete, and custom devices.
onsemi is known for its emphasis on energy-efficient innovations and technologies that enable smart power and intelligent sensing solutions. The company operates globally, serving customers across many industries with a vast portfolio of semiconductor products. Its commitment to innovation and sustainability makes it a significant player in the semiconductor industry.
onsemi is known for its emphasis on energy-efficient innovations and technologies that enable smart power and intelligent sensing solutions. The company operates globally, serving customers across many industries with a vast portfolio of semiconductor products. Its commitment to innovation and sustainability makes it a significant player in the semiconductor industry.
Application
The BC846BWT1G is a general-purpose NPN bipolar junction transistor commonly used in various applications. It is suitable for switching and amplification tasks in electronic circuits. Typical application areas include signal processing, audio amplification, and as a switch in low-power applications. It is also used in consumer electronics, automotive electronics, and communication devices. Additionally, it can support tasks like voltage regulation and circuit protection. Its compact SOT-323 package makes it ideal for use in space-constrained circuit boards.
Package
The BC846BWT1G is a NPN bipolar junction transistor housed in a SOT-323 (SC-70) surface-mount package.
