Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 45V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 2mA, 5V |
| Power - Max | 380mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
The BC847BDW1T1G is a general-purpose NPN bipolar junction transistor (BJT) in a SOT-363 (SC-88) package. It features dual NPN transistors with common emitters, designed for low-power amplification and switching applications.
Key Specifications:
- Voltage (VCEO): 45V
- Current (IC): 100mA per transistor
- Gain (hFE): 110–800 (depending on grade)
- Power Dissipation: 200mW
Applications:
- Signal amplification
- Switching circuits
- Load drivers
- Portable electronics
Advantages:
- Small footprint (SOT-363)
- Matched pair for balanced circuits
- Low noise
Ideal for space-constrained designs requiring reliable, low-power transistor performance. Check datasheets for detailed operating conditions.
Key Specifications:
- Voltage (VCEO): 45V
- Current (IC): 100mA per transistor
- Gain (hFE): 110–800 (depending on grade)
- Power Dissipation: 200mW
Applications:
- Signal amplification
- Switching circuits
- Load drivers
- Portable electronics
Advantages:
- Small footprint (SOT-363)
- Matched pair for balanced circuits
- Low noise
Ideal for space-constrained designs requiring reliable, low-power transistor performance. Check datasheets for detailed operating conditions.
Equivalent
Equivalent products to the BC847BDW1T1G (dual NPN transistor) include:
- MMBT3904DW1T1G (similar dual NPN, SOT-363)
- BC847BS (SMD dual NPN, SOT-363)
- BC847CDW1T1G (higher hFE variant)
- 2SC2412K (SOT-363 dual NPN)
Check datasheets for exact specs like Vce, hFE, and current ratings.
- MMBT3904DW1T1G (similar dual NPN, SOT-363)
- BC847BS (SMD dual NPN, SOT-363)
- BC847CDW1T1G (higher hFE variant)
- 2SC2412K (SOT-363 dual NPN)
Check datasheets for exact specs like Vce, hFE, and current ratings.
Features
The BC847BDW1T1G is a general-purpose NPN transistor in a SOT-363 (SC-88) package, featuring dual NPN transistors in a single device. Key features:
- Voltage Rating: 45V (VCEO).
- Current Rating: 100mA (IC) per transistor.
- Power Dissipation: 200mW (total).
- Gain (hFE): 110–800 (at 2mA IC).
- Low Noise: Suitable for signal amplification.
- Matched Pair: Tight parameter matching between transistors.
- Package: Small SMD footprint (2mm x 1.25mm).
Ideal for amplification, switching, and signal processing in compact circuits.
- Voltage Rating: 45V (VCEO).
- Current Rating: 100mA (IC) per transistor.
- Power Dissipation: 200mW (total).
- Gain (hFE): 110–800 (at 2mA IC).
- Low Noise: Suitable for signal amplification.
- Matched Pair: Tight parameter matching between transistors.
- Package: Small SMD footprint (2mm x 1.25mm).
Ideal for amplification, switching, and signal processing in compact circuits.
Pinout
The BC847BDW1T1G is a SOT-363 (SC-88) package dual NPN transistor with 6 pins.
### Pin Functions (Pinout):
1. Emitter 1 (E1) – Emitter of the first transistor.
2. Base 1 (B1) – Base of the first transistor.
3. Collector 1 (C1) – Collector of the first transistor.
4. Collector 2 (C2) – Collector of the second transistor.
5. Base 2 (B2) – Base of the second transistor.
6. Emitter 2 (E2) – Emitter of the second transistor.
### Key Features:
- Dual NPN transistors in a single package.
- General-purpose amplification/switching.
- Low voltage, low current operation.
### Pin Functions (Pinout):
1. Emitter 1 (E1) – Emitter of the first transistor.
2. Base 1 (B1) – Base of the first transistor.
3. Collector 1 (C1) – Collector of the first transistor.
4. Collector 2 (C2) – Collector of the second transistor.
5. Base 2 (B2) – Base of the second transistor.
6. Emitter 2 (E2) – Emitter of the second transistor.
### Key Features:
- Dual NPN transistors in a single package.
- General-purpose amplification/switching.
- Low voltage, low current operation.
Application
The BC847BDW1T1G, a general-purpose NPN transistor in a SOT-363 package, is commonly used in:
1. Amplification – Small-signal amplification in audio and RF circuits.
2. Switching – Low-power switching in digital logic and control circuits.
3. Signal Processing – Used in oscillators, timers, and sensor interfaces.
4. Consumer Electronics – Found in smartphones, IoT devices, and portable gadgets.
5. Automotive & Industrial – Embedded in control modules and power management systems.
Its dual-emitter configuration (dual NPN) makes it suitable for compact, high-density PCB designs.
1. Amplification – Small-signal amplification in audio and RF circuits.
2. Switching – Low-power switching in digital logic and control circuits.
3. Signal Processing – Used in oscillators, timers, and sensor interfaces.
4. Consumer Electronics – Found in smartphones, IoT devices, and portable gadgets.
5. Automotive & Industrial – Embedded in control modules and power management systems.
Its dual-emitter configuration (dual NPN) makes it suitable for compact, high-density PCB designs.
Package
The BC847BDW1T1G is a SOT-363 (SC-70-6) surface-mount package. It is a small, 6-pin dual NPN transistor array, designed for high-density PCB applications. The compact size (2.0 x 1.25 x 0.8 mm) makes it suitable for space-constrained designs.
