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BC857BWT1G
+BOMTRANS PNP 45V 0.1A SC70-3
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Manufactureronsemi
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Mfr. Part #BC857BWT1G
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Datasheet BC857BWT1G DataSheet
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In Stock2195
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Specifications
| Attribute | Value |
| PartStatus | Active |
| BaseProductNumber | BC857 |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 100 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 45 V |
| VceSaturation(Max)@Ib,Ic | 650mV @ 5mA, 100mA |
| Current-CollectorCutoff(Max) | 15nA (ICBO) |
| DCCurrentGain(hFE)(Min)@Ic,Vce | 220 @ 2mA, 5V |
| Power-Max | 150 mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package | SC-70, SOT-323 |
| SupplierDevicePackage | SC-70-3 (SOT323) |
| Packaging | Bulk, Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
The BC857BWT1G is a low-power NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V. The device is housed in a compact SOT-23 package, making it suitable for space-constrained applications.
Key specifications include a current gain (h_FE) ranging from 100 to 600, providing efficient signal amplification. The transistor operates well at low voltage levels and is commonly used in audio and RF applications, as well as in signal processing circuits.
The BC857BWT1G is characterized by its high-speed switching capabilities and thermal stability, making it reliable in various environments. Additionally, it is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Overall, the BC857BWT1G is a versatile and efficient choice for engineers looking to implement robust electronic designs.
Key specifications include a current gain (h_FE) ranging from 100 to 600, providing efficient signal amplification. The transistor operates well at low voltage levels and is commonly used in audio and RF applications, as well as in signal processing circuits.
The BC857BWT1G is characterized by its high-speed switching capabilities and thermal stability, making it reliable in various environments. Additionally, it is RoHS compliant, ensuring it meets environmental standards for hazardous substances. Overall, the BC857BWT1G is a versatile and efficient choice for engineers looking to implement robust electronic designs.
Equivalent
The BC857BWT1G is a low-noise, PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching. Equivalent products include BC557, BC558, MPS2222, and 2N2907, though specifications like current rating and voltage may vary. Always verify the data sheets for specific electrical characteristics to ensure compatibility in your application.
Features
The BC857BWT1G is a low-power NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
- Type: NPN transistor, suitable for low-voltage and low-current applications.
- Voltage Rating: Collector-Emitter Voltage (Vce) up to 45V, allowing it to handle moderate voltage levels.
- Current Rating: Maximum Collector Current (Ic) of 100mA, ideal for small signal applications.
- Gain: High DC current gain (hFE) ranging typically from 110 to 800, enhancing amplification capabilities.
- Package Type: Available in SOT-23 package for space-saving designs.
- Operating Temperature: Junction temperature range from -55°C to +150°C, suitable for various environmental conditions.
- Applications: Commonly used in switching applications, signal amplification, and as a driver in low-power circuits.
These features make the BC857BWT1G versatile for electronic design in consumer electronics, automotive, and other fields requiring efficient switching and amplification.
- Type: NPN transistor, suitable for low-voltage and low-current applications.
- Voltage Rating: Collector-Emitter Voltage (Vce) up to 45V, allowing it to handle moderate voltage levels.
- Current Rating: Maximum Collector Current (Ic) of 100mA, ideal for small signal applications.
- Gain: High DC current gain (hFE) ranging typically from 110 to 800, enhancing amplification capabilities.
- Package Type: Available in SOT-23 package for space-saving designs.
- Operating Temperature: Junction temperature range from -55°C to +150°C, suitable for various environmental conditions.
- Applications: Commonly used in switching applications, signal amplification, and as a driver in low-power circuits.
These features make the BC857BWT1G versatile for electronic design in consumer electronics, automotive, and other fields requiring efficient switching and amplification.
Pinout
The BC857BWT1G is a PNP bipolar junction transistor (BJT) with a pin count of 3. The pin configuration is as follows:
1. Emitter (E): This is the terminal through which charge carriers exit the transistor.
2. Base (B): The base terminal controls the transistor's operation and is used to turn it on or off.
3. Collector (C): This terminal collects charge carriers from the emitter, allowing current to flow through the transistor.
In applications, the BC857BWT1G is commonly used for switching and amplification purposes in various electronic circuits. It has a maximum collector current of 100 mA and supports a voltage rating (V_CE) of up to 45 V. The device is often utilized in low-power applications due to its compact size and effectiveness in signal processing.
1. Emitter (E): This is the terminal through which charge carriers exit the transistor.
2. Base (B): The base terminal controls the transistor's operation and is used to turn it on or off.
3. Collector (C): This terminal collects charge carriers from the emitter, allowing current to flow through the transistor.
In applications, the BC857BWT1G is commonly used for switching and amplification purposes in various electronic circuits. It has a maximum collector current of 100 mA and supports a voltage rating (V_CE) of up to 45 V. The device is often utilized in low-power applications due to its compact size and effectiveness in signal processing.
Manufacturer
The BC857BWT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including analog, logic, and discrete devices, as well as sensors and power management solutions. The company serves various industries such as automotive, industrial, communications, computing, and consumer electronics.
Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has expanded its portfolio through strategic acquisitions and investments in innovation. The company is committed to providing energy-efficient solutions and plays a significant role in enabling the development of sustainable technologies. Overall, ON Semiconductor is a key player in the semiconductor industry, focusing on high-performance products that meet the evolving needs of its customers.
Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has expanded its portfolio through strategic acquisitions and investments in innovation. The company is committed to providing energy-efficient solutions and plays a significant role in enabling the development of sustainable technologies. Overall, ON Semiconductor is a key player in the semiconductor industry, focusing on high-performance products that meet the evolving needs of its customers.
Application
The BC857BWT1G is a PNP bipolar junction transistor (BJT) commonly used in various applications, including signal amplification, switching, and analog circuits. It is suitable for low-power amplifier circuits, audio applications, and general-purpose switching tasks. Its low noise and high gain make it ideal for consumer electronics, such as audio devices and sensors. Additionally, it can be employed in power management circuits, battery-operated devices, and automotive applications. The BC857BWT1G is favored for its compact size and efficiency in low-voltage environments.
Package
The BC857BWT1G is packaged in a SOT-23 (Small Outline Transistor) package type. This surface-mount package is widely used for its compact size and efficiency in electronic applications.
