Specifications
| Attribute | Value |
| Package | Bulk |
| ProductStatus | Obsolete |
| TransistorType | NPN - Darlington |
| Current-Collector(Ic)(Max) | 8 A |
| Voltage-CollectorEmitterBreakdown(Max) | 100 V |
| VceSaturation(Max)@IbIc | 2V @ 12mA, 3A |
| Current-CollectorCutoff(Max) | 500µA |
| DCCurrentGain(hFE)(Min)@IcVce | 750 @ 3A, 3V |
| Power-Max | 60 W |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-220-3 |
Overview
Description
The BDX53C is a silicon NPN power transistor designed for applications requiring high voltage and high current. It is commonly used in power amplification and switching applications. The transistor features a high collector-emitter voltage rating, typically around 100 volts, and can handle a collector current up to 8 amps, making it suitable for a wide range of power management applications.
The BDX53C operates in the active region, allowing it to function effectively in linear amplification or as a switch. It presents a low saturation voltage, which enhances its efficiency in switching operations and minimizes power loss. The device is housed in a TO-220 package, providing good thermal performance and ease of mounting to heat sinks.
This transistor is often used in audio amplifiers, power supplies, and motor control circuits. Its reliability, robustness, and ease of use make it a popular choice for engineers designing circuits that require efficient handling of high power and voltage levels.
The BDX53C operates in the active region, allowing it to function effectively in linear amplification or as a switch. It presents a low saturation voltage, which enhances its efficiency in switching operations and minimizes power loss. The device is housed in a TO-220 package, providing good thermal performance and ease of mounting to heat sinks.
This transistor is often used in audio amplifiers, power supplies, and motor control circuits. Its reliability, robustness, and ease of use make it a popular choice for engineers designing circuits that require efficient handling of high power and voltage levels.
Equivalent
The BDX53C is an NPN Darlington transistor. Equivalent products include TIP142TIP122 and the MJE800 series, such as the MJE802. These equivalents typically have similar voltage and current ratings, making them suitable substitutes in most applications. Always check the specific datasheets for differences in characteristics to ensure compatibility with your design requirements.
Features
The BDX53C is a silicon NPN Darlington transistor known for its high current gain and robust performance. Key features include:
1. Package Type: It is typically housed in a TO-220 package, offering good thermal performance and ease of mounting.
2. High Current Gain: As a Darlington transistor, it provides very high current gain, making it suitable for applications requiring high amplification.
3. Collector-Emitter Voltage: It has a maximum collector-emitter voltage (Vceo) of around 100V, suitable for moderate voltage applications.
4. Collector Current: The maximum collector current (Ic) is typically around 8A, allowing it to handle substantial power loads.
5. Power Dissipation: The transistor can dissipate a significant amount of power, often around 90W, with proper heat sinking.
6. Low Saturation Voltage: This feature helps in reducing power loss during operation.
7. Applications: It is commonly used in power amplifiers, relay drivers, and other applications where high current and voltage handling are required.
These features make the BDX53C a versatile component in various electronic circuits, particularly in power amplification roles.
1. Package Type: It is typically housed in a TO-220 package, offering good thermal performance and ease of mounting.
2. High Current Gain: As a Darlington transistor, it provides very high current gain, making it suitable for applications requiring high amplification.
3. Collector-Emitter Voltage: It has a maximum collector-emitter voltage (Vceo) of around 100V, suitable for moderate voltage applications.
4. Collector Current: The maximum collector current (Ic) is typically around 8A, allowing it to handle substantial power loads.
5. Power Dissipation: The transistor can dissipate a significant amount of power, often around 90W, with proper heat sinking.
6. Low Saturation Voltage: This feature helps in reducing power loss during operation.
7. Applications: It is commonly used in power amplifiers, relay drivers, and other applications where high current and voltage handling are required.
These features make the BDX53C a versatile component in various electronic circuits, particularly in power amplification roles.
Pinout
The BDX53C is a silicon NPN power Darlington transistor. It typically comes in a TO-220 package and has three pins:
1. Collector (C): This is the main terminal through which the current flows from the collector to the emitter. It is connected to the middle terminal of the transistor.
2. Base (B): This pin is used to drive the transistor and control the flow of current between the collector and the emitter. The base terminal is typically the leftmost pin when the transistor is viewed from the front with the leads pointing downwards.
3. Emitter (E): This pin is where the current exits the transistor. It is the rightmost pin when viewed in the same orientation as described above.
The BDX53C is used in applications requiring high gain and high power, such as in amplifiers and switching circuits. It can handle relatively high voltages and currents compared to standard transistors.
1. Collector (C): This is the main terminal through which the current flows from the collector to the emitter. It is connected to the middle terminal of the transistor.
2. Base (B): This pin is used to drive the transistor and control the flow of current between the collector and the emitter. The base terminal is typically the leftmost pin when the transistor is viewed from the front with the leads pointing downwards.
3. Emitter (E): This pin is where the current exits the transistor. It is the rightmost pin when viewed in the same orientation as described above.
The BDX53C is used in applications requiring high gain and high power, such as in amplifiers and switching circuits. It can handle relatively high voltages and currents compared to standard transistors.
Manufacturer
The BDX53C is a silicon NPN triple diffused power transistor. It is manufactured by multiple companies, including STMicroelectronics, ON Semiconductor, and Fairchild Semiconductor. These companies are leading semiconductor manufacturers that design and produce a wide range of electronic components for various applications.
STMicroelectronics is a global semiconductor company headquartered in Switzerland, known for its innovations in microelectronics and a diverse product portfolio that includes sensors, power and discrete devices, and microcontrollers.
ON Semiconductor, now operating under the brand name onsemi, is an American company that offers energy-efficient power and signal management solutions, focusing on automotive, industrial, and communications sectors.
Fairchild Semiconductor, which was acquired by ON Semiconductor in 2016, was historically recognized for its pioneering role in the development of semiconductor technology and its extensive range of power and signal management solutions.
These companies are integral to the electronics industry, providing essential components that power a wide array of electronic devices and systems.
STMicroelectronics is a global semiconductor company headquartered in Switzerland, known for its innovations in microelectronics and a diverse product portfolio that includes sensors, power and discrete devices, and microcontrollers.
ON Semiconductor, now operating under the brand name onsemi, is an American company that offers energy-efficient power and signal management solutions, focusing on automotive, industrial, and communications sectors.
Fairchild Semiconductor, which was acquired by ON Semiconductor in 2016, was historically recognized for its pioneering role in the development of semiconductor technology and its extensive range of power and signal management solutions.
These companies are integral to the electronics industry, providing essential components that power a wide array of electronic devices and systems.
Application
The BDX53C is an NPN Darlington transistor commonly used in applications requiring high current gain and fast switching. Its primary application areas include:
1. Amplifiers: Used in audio amplifiers and signal amplification circuits due to its high gain.
2. Motor Control: Suitable for driving motors in various applications like robotics and automation.
3. Relay Drivers: Employed in circuits to switch relays with low input current.
4. Switching Power Supplies: Utilized for efficient power conversion in switched-mode power supplies.
5. LED Drivers: Used in driving LED displays and lighting systems.
6. General Switching: Applicable in a range of electronic switches for high-current applications.
These applications leverage the BDX53C's high gain and current handling capabilities.
1. Amplifiers: Used in audio amplifiers and signal amplification circuits due to its high gain.
2. Motor Control: Suitable for driving motors in various applications like robotics and automation.
3. Relay Drivers: Employed in circuits to switch relays with low input current.
4. Switching Power Supplies: Utilized for efficient power conversion in switched-mode power supplies.
5. LED Drivers: Used in driving LED displays and lighting systems.
6. General Switching: Applicable in a range of electronic switches for high-current applications.
These applications leverage the BDX53C's high gain and current handling capabilities.
Package
The BDX53C is a silicon NPN epitaxial power transistor typically packaged in a TO-220 form. This package type is common for power transistors, featuring three leads for easy mounting on heat sinks and providing efficient thermal dissipation.
