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BSH103BKR
+BOMBSH103BK - 30 V, N-CHANNEL TRENC
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ManufacturerNexperia USA Inc.
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Mfr. Part #BSH103BKR
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In Stock7731
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Specifications
| Attribute | Value |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 270mOhm @ 1A, 4.5V |
| Vgs(th)(Max) @ Id | 1.25V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.2 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 79.3 pF @ 15 V |
| Power Dissipation (Max) | 330mW (Ta), 2.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Overview
Description
Typically, an introductory BSH103BKR covers foundational concepts in the BSH field, introduces key terminology, core methods, and basic applications. Learning outcomes usually include describing major concepts, interpreting simple data, and applying foundational techniques. The course usually includes lectures plus practical labs or tutorials, with assessments such as quizzes, assignments, and a final exam. Prerequisites and exact topics depend on the program and university.
Pinout
Function: N‑channel enhancement‑mode MOSFET. The three pins are Gate (control), Drain and Source (power). Used for low‑voltage switching, load driving and general-purpose MOSFET applications.
Manufacturer
What kind of company: Diodes Inc. is a global semiconductor manufacturer that designs and produces discrete semiconductors, logic and analog ICs, power-management devices and related components. (Verify the specific BSH103BKR datasheet on distributor sites like Digi‑Key or Mouser for confirmation.)