BSO615CGHUMA1

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BSO615CGHUMA1

+BOM

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

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Specifications

Attribute Value
Supplier Infineon Technologies,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series SIPMOS®
ProductStatus Obsolete
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 3.1A, 2A
RdsOn(Max)@IdVgs 110mOhm @ 3.1A, 10V
Vgs(th)(Max)@Id 2V @ 20µA
GateCharge(Qg)(Max)@Vgs 22.5nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 380pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

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