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BSS123,215
+BOMMOSFET N-CH 100V 150MA TO236AB
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ManufacturerNexperia USA Inc.
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Mfr. Part #BSS123,215
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In Stock7248
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Specifications
| Attribute | Value |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 150mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 120mA, 10V |
| Vgs(th)(Max) @ Id | 2.8V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 40 pF @ 25 V |
| Power Dissipation (Max) | 250mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Overview
Description
Here’s a concise intro to BSS123 and BSS215 (both are in the BSS MOSFET family):
- Type: N-channel, enhancement-mode MOSFETs in SOT-23 package; used as small-signal switches and buffers.
- BSS123: a widely used logic‑level MOSFET suitable for switching, level shifting, and amplification in 3.3–5 V circuits.
- BSS215: another N-channel MOSFET in the same family, typically offering higher voltage/current headroom than the BSS123 (exact ratings vary by manufacturer).
- Key specs to check: drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)), and gate threshold. Values differ by variant/manufacturer.
- Pinout: three pins in SOT-23; consult the specific datasheet for G, D, S orientation.
- How to use: choose the device that matches your supply, required current, and switching speed; suitable for level shifting, small‑signal switching, and buffering in low-power circuits.
Note: Always verify the exact part version with its datasheet, as ratings vary by vendor.
- Type: N-channel, enhancement-mode MOSFETs in SOT-23 package; used as small-signal switches and buffers.
- BSS123: a widely used logic‑level MOSFET suitable for switching, level shifting, and amplification in 3.3–5 V circuits.
- BSS215: another N-channel MOSFET in the same family, typically offering higher voltage/current headroom than the BSS123 (exact ratings vary by manufacturer).
- Key specs to check: drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)), and gate threshold. Values differ by variant/manufacturer.
- Pinout: three pins in SOT-23; consult the specific datasheet for G, D, S orientation.
- How to use: choose the device that matches your supply, required current, and switching speed; suitable for level shifting, small‑signal switching, and buffering in low-power circuits.
Note: Always verify the exact part version with its datasheet, as ratings vary by vendor.
Features
BSS123 is a small-signal N-channel MOSFET (enhancement mode) in a SOT-23 package. Key features:
- N-channel enhancement MOSFET for switching and level shifting
- Package: SOT-23 (3 pins)
- Logic-level gate: turns on with relatively low VGS (approx. 1–3 V)
- VDS rating: high voltage (typical around 100 V)
- ID rating: modest (tens to a few hundred milliamps)
- RDS(on): low to moderate (a few ohms, depends on VGS)
- Fast switching with low gate charge
- Suitable for level shifters, small-signal switching, and low-power switches
- Durable electrical characteristics (avalanche energy capability, good ESD tolerance)
Note: exact values vary by manufacturer; check the specific datasheet for precise VDS, ID, and RDS(on) for your device.
- N-channel enhancement MOSFET for switching and level shifting
- Package: SOT-23 (3 pins)
- Logic-level gate: turns on with relatively low VGS (approx. 1–3 V)
- VDS rating: high voltage (typical around 100 V)
- ID rating: modest (tens to a few hundred milliamps)
- RDS(on): low to moderate (a few ohms, depends on VGS)
- Fast switching with low gate charge
- Suitable for level shifters, small-signal switching, and low-power switches
- Durable electrical characteristics (avalanche energy capability, good ESD tolerance)
Note: exact values vary by manufacturer; check the specific datasheet for precise VDS, ID, and RDS(on) for your device.
Pinout
Pin count: 3. Function: N-channel enhancement-mode MOSFET (logic-level small-signal switch) in a SOT-23 package. Typical pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. Used as a low-side switch or signal-level switch in circuits.
Manufacturer
Manufacturer: Vishay Intertechnology, Inc. (Vishay).
What kind of company: A multinational electronics components company that designs and manufactures discrete semiconductors and passive electronic components, serving a wide range of industries.
What kind of company: A multinational electronics components company that designs and manufactures discrete semiconductors and passive electronic components, serving a wide range of industries.
Application
BSS123 and BSS215 are N‑channel enhancement MOSFETs used as small‑signal switches in low‑power circuits.
Typical applications:
- Level shifting between logic families (e.g., 3.3V↔5V)
- Low‑side switching in DC‑DC converters and power supplies
- General‑purpose switching in microcontroller interfaces
- LED drivers and other low‑current load switching
- Analog signal gating in audio/RF paths
- Protection, clamping, and discharge networks in control circuits
Check each device’s datasheet for exact Vds, Id, and Rds(on) ratings before use.
Typical applications:
- Level shifting between logic families (e.g., 3.3V↔5V)
- Low‑side switching in DC‑DC converters and power supplies
- General‑purpose switching in microcontroller interfaces
- LED drivers and other low‑current load switching
- Analog signal gating in audio/RF paths
- Protection, clamping, and discharge networks in control circuits
Check each device’s datasheet for exact Vds, Id, and Rds(on) ratings before use.
Package
BSS123 uses a SOT-23 (TO‑236AB) 3‑pin surface-mount package. The “215” isn’t a package type, just a code/lot.
