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BSZ0910NDXTMA1
+BOMDIFFERENTIATED MOSFETS
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ManufacturerInfineon Technologies
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Mfr. Part #BSZ0910NDXTMA1
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Datasheet BSZ0910NDXTMA1 DataSheet
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Package VDFN-8
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In Stock8827
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Specifications
| Attribute | Value |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | OptiMOS™ |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 9.5A (Ta), 25A (Tc) |
| Rds On(Max) @ Id Vgs | 9.5mOhm @ 9A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5.6nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 800pF @ 15V |
| Power - Max | 1.9W (Ta), 31W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
