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BU21010MUV-E2
+BOMIC CTLR CAP SENSOR 8CH 16VQFN
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ManufacturerRohm Semiconductor
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Mfr. Part #BU21010MUV-E2
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Datasheet BU21010MUV-E2 DataSheet
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In Stock10985
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Specifications
| Attribute | Value |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Type | Capacitive Sensor Controller |
| Input Type | Logic |
| Output Type | Logic |
| Supply Current | 300 µA |
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount |
| Package / Case | 16-VFQFN |
| Supplier Device Package | 16-VQFN (4x4) |
| Base Product Number | BU21010 |
Overview
Description
- Input Voltage Range: 4.5V to 18V
- Output Voltage: Adjustable (0.8V to 15V)
- Output Current: Up to 1A
- High Efficiency: Up to 92% (PWM control)
- Low Quiescent Current: ~30µA (light load mode)
- Protections: Overcurrent, thermal shutdown, and undervoltage lockout (UVLO)
It operates in PWM/PFM auto-switching mode for optimal efficiency across load conditions. The compact SOP-8 package makes it suitable for portable devices, IoT, and industrial applications.
For detailed specs, refer to the datasheet or ROHM’s official documentation.
Equivalent
- MLX90393 (Melexis)
- TLE493D (Infineon)
- A1324 (Allegro MicroSystems)
- DRV5053 (Texas Instruments)
These alternatives offer comparable Hall-effect sensing for position detection, current sensing, or rotary encoding. Check datasheets for exact specs and pin compatibility.
Features
- Current Sensing Range: ±10A (bidirectional).
- Output Type: Analog voltage (ratiometric to supply voltage).
- Supply Voltage: 3.0V to 5.5V.
- Low Power Consumption: Typically 6mA.
- High Accuracy: ±1.5% full-scale error (typical).
- Bandwidth: 120kHz.
- Isolation: Built-in galvanic isolation for safety.
- Package: SSOP6 (compact surface-mount).
- Applications: Motor control, battery management, industrial systems.
It provides non-contact current sensing with fast response and low noise, making it suitable for high-efficiency designs.
Manufacturer
ROHM, founded in 1958, is headquartered in Kyoto, Japan, and is recognized for innovation and reliability in semiconductor technology.