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BUK9Y41-80E
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ManufacturerNexperia
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Mfr. Part #BUK9Y41-80E
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In Stock7080
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Specifications
| Attribute | Value |
| Technology | Si |
| Brand | Nexperia |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Type | SMD/SMT |
| Package / Case | SOT-669-5 |
Overview
Description
BUK9Y41-80E is a vertical N-channel MOSFET designed for high-efficiency power management applications. This device is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for use in power supplies, motor drives, and various electronic circuits. With a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 41A, it can handle significant power loads, offering reliable performance in demanding environments. Its compact package allows for efficient thermal management, enhancing its overall reliability. BUK9Y41-80E also features fast switching characteristics, which help improve the efficiency of applications like DC-DC converters and inverters. Overall, this MOSFET is an ideal choice for engineers looking to optimize the performance and efficiency of their designs.
Equivalent
The BUK9Y41-80E is a N-channel MOSFET, and its equivalent products include the IRF320, STP16NF06, and BSS141. However, always verify specifications such as voltage, current ratings, and package type to ensure compatibility in your specific application.
Features
The BUK9Y41-80E is a high-performance N-channel MOSFET known for its low on-resistance and fast switching capabilities. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 9A, allowing it to support moderate power levels.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)), typically around 0.018 ohms, which minimizes power loss during operation.
4. Fast Switching Speed: The device is optimized for low gate charge (Q_g), enabling faster switching times, beneficial for high-efficiency applications.
5. Thermal Performance: It has a good thermal resistance, allowing effective heat dissipation, which is essential for reliability.
6. Package Type: Available in a compact TO-220 package, facilitating easy thermal management and mounting.
These features make the BUK9Y41-80E ideal for switching and amplification applications in power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 9A, allowing it to support moderate power levels.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)), typically around 0.018 ohms, which minimizes power loss during operation.
4. Fast Switching Speed: The device is optimized for low gate charge (Q_g), enabling faster switching times, beneficial for high-efficiency applications.
5. Thermal Performance: It has a good thermal resistance, allowing effective heat dissipation, which is essential for reliability.
6. Package Type: Available in a compact TO-220 package, facilitating easy thermal management and mounting.
These features make the BUK9Y41-80E ideal for switching and amplification applications in power electronics.
Pinout
The BUK9Y41-80E is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation by allowing voltage to turn the device on or off.
2. Drain (D): This pin is where the current exits the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is where the current enters the MOSFET. It typically connects to ground in a low-side switching configuration.
The BUK9Y41-80E is designed for high-efficiency applications, providing low on-resistance and fast switching capabilities. It is commonly used in power management circuits, motor controls, and other applications requiring efficient power handling.
1. Gate (G): This pin controls the MOSFET's operation by allowing voltage to turn the device on or off.
2. Drain (D): This pin is where the current exits the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is where the current enters the MOSFET. It typically connects to ground in a low-side switching configuration.
The BUK9Y41-80E is designed for high-efficiency applications, providing low on-resistance and fast switching capabilities. It is commonly used in power management circuits, motor controls, and other applications requiring efficient power handling.
Manufacturer
The BUK9Y41-80E is manufactured by Nexperia, a company that specializes in the production of discrete, logic, and MOSFET semiconductor devices. Nexperia was established in 2017 as a spin-off from NXP Semiconductors and focuses on high-volume manufacturing of semiconductor components. The company is known for its expertise in efficient production processes and commitment to quality, offering a wide range of products for various applications across industries such as automotive, telecommunications, consumer electronics, and industrial sectors. Nexperia operates globally, providing reliable and innovative solutions tailored to meet customer needs in the semiconductor market.
Application
The BUK9Y41-80E is a high-voltage N-channel MOSFET used primarily in power management applications. Its key areas of application include:
1. Switching Power Supplies: Efficiently regulating voltage in power converters.
2. Motor Drives: Controlling motor speed and torque in industrial and automotive applications.
3. DC-DC Converters: Used in both step-up and step-down configurations.
4. Lighting: Driving LED circuits and other lighting solutions.
5. Energy Storage Systems: Managing power in battery systems and renewable energy applications.
Its low on-resistance and high-speed switching capabilities make it suitable for these areas.
1. Switching Power Supplies: Efficiently regulating voltage in power converters.
2. Motor Drives: Controlling motor speed and torque in industrial and automotive applications.
3. DC-DC Converters: Used in both step-up and step-down configurations.
4. Lighting: Driving LED circuits and other lighting solutions.
5. Energy Storage Systems: Managing power in battery systems and renewable energy applications.
Its low on-resistance and high-speed switching capabilities make it suitable for these areas.
Package
The BUK9Y41-80E is housed in a TO-220 package type. This package is known for its robust thermal performance and is commonly used for power transistors and MOSFETs, allowing effective heat dissipation.
