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C3M0120065D
+BOM650V 120M SIC MOSFET
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ManufacturerWolfspeed, Inc.
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Mfr. Part #C3M0120065D
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In Stock70
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Specifications
| Attribute | Value |
| Supplier | Wolfspeed, Inc. |
| Package / Case | Tube |
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 22A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 157mOhm @ 6.76A, 15V |
| Vgs(th)(Max) @ Id | 3.6V @ 1.86mA |
| Gate Charge(Qg)(Max) @ Vgs | 28 nC @ 15 V |
| Vgs(Max) | +19V, -8V |
| Input Capacitance(Ciss)(Max) @ Vds | 640 pF @ 400 V |
| Power Dissipation (Max) | 98W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
