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C3M0350120J
+BOMSICFET N-CH 1200V 7.2A TO263-7
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ManufacturerWolfspeed, Inc.
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Mfr. Part #C3M0350120J
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Datasheet C3M0350120J DataSheet
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In Stock8876
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Specifications
| Attribute | Value |
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 455mOhm @ 3.6A, 15V |
| Vgs(th) (Max) @ Id | 3.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 15 V |
| Vgs (Max) | +15V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 345 pF @ 1000 V |
| Power Dissipation (Max) | 40.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number | C3M0350120 |
Overview
Description
C3M0350120J is a specific model number used to identify a component or product, often related to electronics or manufacturing. While I don't have detailed information on this exact model, products with such designations typically belong to categories like sensors, microcontrollers, or other electronic devices. The number could denote various specifications, including power ratings, functionalities, or manufacturer details.
For accurate information, it's best to consult the manufacturer's datasheet or product documentation, which provides detailed specifications, applications, and operational guidelines. If you have a specific context or industry in mind, please provide that for more tailored information.
For accurate information, it's best to consult the manufacturer's datasheet or product documentation, which provides detailed specifications, applications, and operational guidelines. If you have a specific context or industry in mind, please provide that for more tailored information.
Equivalent
The C3M0350120J chip is a silicon carbide (SiC) MOSFET used for power applications. Equivalent products include:
1. C3M0350120K
2. C3M0350120L
3. STPSC12065
4. SiC MOSFETs from Infineon (like IMBF120R045)
5. Wolfspeed C3M0065120K
Always verify specifications for compatibility in your specific application.
1. C3M0350120K
2. C3M0350120L
3. STPSC12065
4. SiC MOSFETs from Infineon (like IMBF120R045)
5. Wolfspeed C3M0065120K
Always verify specifications for compatibility in your specific application.
Features
The C3M0350120J is a Silicon Carbide (SiC) MOSFET designed for high-efficiency power switching applications. Its key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 35A, it supports demanding power requirements.
3. Low On-Resistance (RDS(on)): The device offers a low on-resistance, typically around 35 mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: The SiC technology enables faster switching times compared to traditional silicon MOSFETs, reducing switching losses and improving system performance.
5. Thermal Performance: It provides excellent thermal stability and can operate efficiently at high temperatures, enhancing reliability in challenging environments.
6. Applications: Ideal for use in power supplies, inverters, and motor drives, particularly in renewable energy systems and electric vehicles.
Overall, the C3M0350120J offers a combination of high performance, efficiency, and reliability for advanced power electronics applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 35A, it supports demanding power requirements.
3. Low On-Resistance (RDS(on)): The device offers a low on-resistance, typically around 35 mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: The SiC technology enables faster switching times compared to traditional silicon MOSFETs, reducing switching losses and improving system performance.
5. Thermal Performance: It provides excellent thermal stability and can operate efficiently at high temperatures, enhancing reliability in challenging environments.
6. Applications: Ideal for use in power supplies, inverters, and motor drives, particularly in renewable energy systems and electric vehicles.
Overall, the C3M0350120J offers a combination of high performance, efficiency, and reliability for advanced power electronics applications.
Pinout
The C3M0350120J is a SiC (silicon carbide) MOSFET designed for high-efficiency power applications. It features a TO-247 package with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off based on the input signal.
2. Drain (D): This pin is the output where the load is connected. It carries the current from the source to the load when the MOSFET is in the 'on' state.
3. Source (S): This pin serves as the source of the current flow to ground or the negative side of the power supply.
The C3M0350120J is designed for applications such as power converters, inverters, and motor drives, providing high efficiency and thermal performance.
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off based on the input signal.
2. Drain (D): This pin is the output where the load is connected. It carries the current from the source to the load when the MOSFET is in the 'on' state.
3. Source (S): This pin serves as the source of the current flow to ground or the negative side of the power supply.
The C3M0350120J is designed for applications such as power converters, inverters, and motor drives, providing high efficiency and thermal performance.
Manufacturer
The C3M0350120J is manufactured by Wolfspeed, a subsidiary of Cree, Inc. Wolfspeed specializes in wide bandgap semiconductor technology, particularly silicon carbide (SiC) and gallium nitride (GaN) materials. The company is recognized for its innovations in power and radio frequency (RF) devices, which are crucial for various applications, including electric vehicles, renewable energy systems, and telecommunications.
Wolfspeed is a leading player in the semiconductor industry, focusing on high-efficiency, high-performance solutions that meet the growing demands for energy savings and reduced emissions in modern electronic systems. The company is known for its commitment to advancing semiconductor technology, driving the transition from traditional silicon-based components to more efficient SiC and GaN solutions. This transition is vital for enabling faster, smaller, and more efficient electronic devices across multiple sectors, including automotive, industrial, and consumer electronics.
Wolfspeed is a leading player in the semiconductor industry, focusing on high-efficiency, high-performance solutions that meet the growing demands for energy savings and reduced emissions in modern electronic systems. The company is known for its commitment to advancing semiconductor technology, driving the transition from traditional silicon-based components to more efficient SiC and GaN solutions. This transition is vital for enabling faster, smaller, and more efficient electronic devices across multiple sectors, including automotive, industrial, and consumer electronics.
Application
The C3M0350120J is a silicon carbide (SiC) MOSFET, primarily used in high-efficiency power applications. Key application areas include:
1. Electric Vehicles (EVs) - Enhancing efficiency in inverters and converters.
2. Renewable Energy - Optimizing grid-tied inverters for solar and wind systems.
3. Industrial Power Supplies - Improving performance in power conversion systems and motor drives.
4. Telecommunications - Used in DC-DC converters for improved power efficiency.
5. Consumer Electronics - Enhancing power management in chargers and adapters.
Its high switching speed and thermal efficiency make it suitable for demanding applications.
1. Electric Vehicles (EVs) - Enhancing efficiency in inverters and converters.
2. Renewable Energy - Optimizing grid-tied inverters for solar and wind systems.
3. Industrial Power Supplies - Improving performance in power conversion systems and motor drives.
4. Telecommunications - Used in DC-DC converters for improved power efficiency.
5. Consumer Electronics - Enhancing power management in chargers and adapters.
Its high switching speed and thermal efficiency make it suitable for demanding applications.
Package
The C3M0350120J is a silicon carbide (SiC) MOSFET that typically comes in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal management and ease of mounting.
