CAB760M12HM3R

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CAB760M12HM3R

+BOM

760A 1200V SIC HALF-BRIDGE MODUL

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Specifications

Attribute Value
Package / Case Box
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain(Id) @ 25°C 1.015kA (Tc)
Rds On(Max) @ Id Vgs 1.73mOhm @ 760A, 15V
Vgs(th)(Max) @ Id 3.6V @ 280mA
Gate Charge(Qg)(Max) @ Vgs 2724nC @ 15V
Input Capacitance(Ciss)(Max) @ Vds 79400pF @ 800V
Power - Max 50mW
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount

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