CDM22010-650 SL

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CDM22010-650 SL

+BOM

MOSFET N-CH 650V 10A TO220

  • ManufacturerCentral Semiconductor Corp

  • Mfr. Part #CDM22010-650 SL

  • In Stock476

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Specifications

Attribute Value
Supplier Central Semiconductor Corp
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 10A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1Ohm @ 5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 20 nC @ 10 V
Vgs(Max) 30V
Input Capacitance(Ciss)(Max) @ Vds 1168 pF @ 25 V
Power Dissipation (Max) 2W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

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