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CSD17573Q5B
+BOMMOSFET N-CH 30V 100A 8VSON
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ManufacturerTexas Instruments
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Mfr. Part #CSD17573Q5B
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Package PowerTDFN-8
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In Stock2605
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1mOhm @ 35A, 10V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 64 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9000 pF @ 15 V |
| PowerDissipation(Max) | 3.2W (Ta), 195W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSON-CLIP (5x6) |
Overview
Description
Equivalent
1. Infineon BSC090N15NS5 - Similar Rds(on) and current rating.
2. ON Semiconductor NTMFS5C604NL - Comparable voltage and current characteristics.
3. Vishay SiRA14DP - Close Rds(on) and performance specs.
When selecting equivalents, verify parameters like Rds(on), Vgs, Id, and package compatibility.
Features
1. Voltage and Current Ratings: It supports a drain-to-source voltage (V_ds) of up to 30V and a continuous drain current (I_d) of approximately 84A.
2. Low On-Resistance: This MOSFET exhibits a low on-state resistance (R_ds(on)), which minimizes power loss and enhances efficiency in switching applications.
3. Fast Switching Performance: Designed for high-speed operation, it facilitates rapid switching, which is crucial for applications like DC-DC converters and synchronous rectification.
4. Thermal Characteristics: It comes in a compact, thermally efficient package, optimizing heat dissipation and allowing for high power handling.
5. Package Type: Available in a 5mm x 6mm SON (Small Outline No-lead) package, which saves PCB space.
6. Enhanced Performance: Suitable for both low-side and high-side operation in switching applications.
These features make the CSD17573Q5B a versatile choice for developers looking to optimize power efficiency and performance in compact electronic designs.
Pinout
The pin configuration is as follows:
1. Pins 1, 2, 3: Source (S) - These pins are typically connected to the negative side of the load or ground.
2. Pin 4: Gate (G) - This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
3. Pins 5, 6, 7, 8: Drain (D) - These pins are usually connected to the positive side of the power supply.
The device's package and pin design offer low on-resistance and high efficiency, making it suitable for high-performance power management applications.