Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 2mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 68 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4430 pF @ 15 V |
| PowerDissipation(Max) | 3.1W (Ta), 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
Overview
Description
The CSD17576Q5B is a 30V N-channel NexFET™ power MOSFET from Texas Instruments (TI). It features low on-resistance (RDS(on)) and high current handling (up to 60A), making it ideal for high-efficiency power switching in applications like DC-DC converters, motor drives, and load switches.
Key specs:
- VDSS: 30V
- ID: 60A (continuous)
- RDS(on): 1.7mΩ (max at VGS = 10V)
- Package: 5x6mm SON (Q5B) for compact designs.
Its optimized gate charge (QG) reduces switching losses, enhancing performance in high-frequency circuits. Designed for automotive and industrial use, it meets AEC-Q101 standards for reliability.
For detailed specs, refer to TI’s datasheet (SLVSDX1).
Key specs:
- VDSS: 30V
- ID: 60A (continuous)
- RDS(on): 1.7mΩ (max at VGS = 10V)
- Package: 5x6mm SON (Q5B) for compact designs.
Its optimized gate charge (QG) reduces switching losses, enhancing performance in high-frequency circuits. Designed for automotive and industrial use, it meets AEC-Q101 standards for reliability.
For detailed specs, refer to TI’s datasheet (SLVSDX1).
Equivalent
The CSD17576Q5B is a 30V N-channel MOSFET. Equivalent alternatives include:
- Infineon BSC093N04LS (30V, 9.3mΩ)
- Vishay SiR626DP (30V, 7.5mΩ)
- ON Semiconductor NVMFS5C404NL (40V, 4mΩ)
- TI CSD17573Q5B (30V, 8.8mΩ, similar series)
Check datasheets for exact specs like RDS(on), current rating, and package compatibility.
- Infineon BSC093N04LS (30V, 9.3mΩ)
- Vishay SiR626DP (30V, 7.5mΩ)
- ON Semiconductor NVMFS5C404NL (40V, 4mΩ)
- TI CSD17573Q5B (30V, 8.8mΩ, similar series)
Check datasheets for exact specs like RDS(on), current rating, and package compatibility.
Pinout
The CSD17576Q5B is a N-channel MOSFET in a 5-pin (SON) 5x6mm package.
Pin Functions:
1. Gate (G) – Controls the switching.
2. Drain (D1, D2, D3) – Three drain pins for lower resistance and better thermal performance (internally connected).
4. Source (S) – Output/return path.
Key Features:
- 30V drain-source voltage (VDS)
- 60A continuous current (ID)
- Low RDS(on) (1.7mΩ max at VGS=10V)
- Optimized for high-efficiency power conversion (e.g., DC-DC, motor drives).
The multiple drain pins enhance current handling and heat dissipation.
Pin Functions:
1. Gate (G) – Controls the switching.
2. Drain (D1, D2, D3) – Three drain pins for lower resistance and better thermal performance (internally connected).
4. Source (S) – Output/return path.
Key Features:
- 30V drain-source voltage (VDS)
- 60A continuous current (ID)
- Low RDS(on) (1.7mΩ max at VGS=10V)
- Optimized for high-efficiency power conversion (e.g., DC-DC, motor drives).
The multiple drain pins enhance current handling and heat dissipation.
Manufacturer
The CSD17576Q5B is a power MOSFET manufactured by Texas Instruments (TI). TI is a leading global semiconductor company specializing in analog and embedded processing technologies. Known for its innovation, TI produces a wide range of components, including integrated circuits, power management solutions, and sensors, serving industries like automotive, industrial, and consumer electronics. The company is headquartered in Dallas, Texas, and is renowned for its high-performance, reliable products.
