CSD18504Q5A

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CSD18504Q5A

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MOSFET N-CH 40V 15A/50A 8VSON

  • ManufacturerTexas Instruments

  • Mfr. Part #CSD18504Q5A

  • Package TDFN-8

  • In Stock3769

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 15A (Ta), 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 6.6mOhm @ 17A, 10V
Vgs(th)(Max)@Id 2.4V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1656 pF @ 20 V
PowerDissipation(Max) 3.1W (Ta), 77W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (5x6)

Overview

Description

The CSD18504Q5A is a 60V, 4.2mΩ N-channel MOSFET from Texas Instruments, designed for high-efficiency power applications. Key features include:
- Low RDS(on): Minimizes conduction losses.
- Fast switching: Optimized for high-frequency designs (e.g., DC-DC converters, motor drives).
- Robust thermal performance: Uses a PowerPAD™ package for improved heat dissipation.
- AEC-Q101 qualified: Suitable for automotive applications.
Ideal for load switches, power supplies, and battery management, it balances performance and reliability. Check the datasheet for detailed specs like gate charge (Qg) and voltage thresholds.

Equivalent

The CSD18504Q5A is a 40V, 5.3mΩ N-channel MOSFET by Texas Instruments. Equivalent alternatives include:
- Infineon IPD90N04S4-04 (40V, 4.1mΩ)
- Vishay SiR456DP (40V, 5.2mΩ)
- ON Semiconductor NTMFS5C404N (40V, 4.0mΩ)
- STMicroelectronics STL160N4F7 (40V, 4.2mΩ)
Check datasheets for compatibility in your application.

Features

The CSD18504Q5A is a 60V, 4.3mΩ N-channel MOSFET by Texas Instruments, optimized for high-efficiency power applications. Key features:
- Low RDS(on): 4.3mΩ (max at VGS=10V) for reduced conduction losses.
- High Current Handling: 120A continuous (175A pulsed).
- Fast Switching: Optimized for high-frequency applications (Qgd=13nC).
- Robust Design: Avalanche-rated, with a 175°C max junction temperature.
- Low Gate Charge (Qg=60nC): Enhances switching efficiency.
- 5V Gate Drive Compatible: Supports logic-level control.
- Thermal Performance: PowerPAD™ package for improved heat dissipation.
Ideal for DC-DC converters, motor drives, and power tools.

Manufacturer

The CSD18504Q5A is a 60V, 4.3mΩ N-channel MOSFET manufactured by Texas Instruments (TI).
Texas Instruments is a leading global semiconductor company specializing in analog and embedded processing technologies. Founded in 1930 and headquartered in Dallas, Texas, TI designs and manufactures a wide range of chips for industrial, automotive, consumer electronics, and communications applications.
The CSD18504Q5A is part of TI’s NexFET™ power MOSFET lineup, optimized for high-efficiency power conversion.

Application

The CSD18504Q5A is a 40V, 5.2mΩ N-channel MOSFET by Texas Instruments, ideal for high-efficiency power applications. Key areas include:
1. DC-DC Converters – Used in buck/boost circuits for voltage regulation.
2. Motor Drives – Efficient switching in brushed/BLDC motor controls.
3. Power Supplies – Enhances performance in server, telecom, and industrial PSUs.
4. Battery Management – Protects and switches in Li-ion/power tool systems.
5. Automotive Systems – Supports 12V/24V loads like LED drivers and solenoids.
Its low RDS(on) and compact package (SON 5x6mm) suit space-constrained, high-current designs.

Package

The CSD18504Q5A is a 40V, 5.2mΩ N-channel MOSFET from Texas Instruments, packaged in a PowerPAD SO-8 (DDA). This surface-mount package features an exposed thermal pad for enhanced heat dissipation, improving thermal performance in high-current applications. The compact SO-8 form factor is suitable for space-constrained designs.

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