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CSD18512Q5B
+BOMMOSFET N-CH 40V 211A 8VSON
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ManufacturerTexas Instruments
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Mfr. Part #CSD18512Q5B
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In Stock6030
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Specifications
| Attribute | Value |
| Supplier | Texas Instruments |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 211A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.6mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 7120 pF @ 20 V |
| Power Dissipation (Max) | 139W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
Overview
Description
CSD18512Q5B appears to be a specific code or identifier, possibly related to a course, module, or technical specification. Without additional context, it's difficult to provide a precise description. If it's a course code, it could pertain to a subject within an academic or technical field, such as computer science, engineering, or data analytics. The introduction to such a course would likely cover foundational topics, key concepts, and objectives to prepare students for deeper exploration of the subject matter.
If it's a technical specification or model number, the introduction would typically outline its purpose, features, and applications. For example, if related to a semiconductor or electronic component, it might include details on its functionality, performance characteristics, and potential use cases in various technologies.
To provide more specific information, additional context about what CSD18512Q5B refers to would be necessary.
If it's a technical specification or model number, the introduction would typically outline its purpose, features, and applications. For example, if related to a semiconductor or electronic component, it might include details on its functionality, performance characteristics, and potential use cases in various technologies.
To provide more specific information, additional context about what CSD18512Q5B refers to would be necessary.
Equivalent
The CSD18512Q5B is an N-channel MOSFET produced by Texas Instruments. Equivalent products from other manufacturers that may serve as alternatives include:
1. IRLB3034 from Infineon Technologies - Similar voltage and current ratings.
2. NVMFS5C646NL from ON Semiconductor - Comparable specifications.
3. STP310N10F7 from STMicroelectronics - Equivalent functionality.
Always verify electrical characteristics and pin configurations to ensure compatibility in your application.
1. IRLB3034 from Infineon Technologies - Similar voltage and current ratings.
2. NVMFS5C646NL from ON Semiconductor - Comparable specifications.
3. STP310N10F7 from STMicroelectronics - Equivalent functionality.
Always verify electrical characteristics and pin configurations to ensure compatibility in your application.
Features
The CSD18512Q5B is a N-channel MOSFET developed by Texas Instruments, primarily used in power management applications. Here are its key features:
1. Voltage and Current Ratings: The MOSFET typically supports a maximum drain-source voltage (V_DS) of around 40V and a continuous drain current (I_D) of up to 24A.
2. R_DS(on): It features a low on-state resistance (R_DS(on)), usually around 11 mΩ at V_GS = 10V, enhancing efficiency by reducing conduction losses.
3. Package: Comes in a compact and thermally efficient SON 5x6mm package, facilitating effective heat dissipation.
4. Fast Switching: Designed for fast switching speeds, which helps in minimizing transition losses, thereby improving overall efficiency in high-frequency applications.
5. Thermal Performance: Supports robust thermal performance due to its design, making it suitable for demanding power applications.
6. Applications: Commonly used in DC-DC converters, synchronous rectification, motor drives, and other power management scenarios.
7. Reliability: Built to offer high reliability and durability in various operational environments.
These features make the CSD18512Q5B a versatile choice for various applications requiring efficient power handling and management.
1. Voltage and Current Ratings: The MOSFET typically supports a maximum drain-source voltage (V_DS) of around 40V and a continuous drain current (I_D) of up to 24A.
2. R_DS(on): It features a low on-state resistance (R_DS(on)), usually around 11 mΩ at V_GS = 10V, enhancing efficiency by reducing conduction losses.
3. Package: Comes in a compact and thermally efficient SON 5x6mm package, facilitating effective heat dissipation.
4. Fast Switching: Designed for fast switching speeds, which helps in minimizing transition losses, thereby improving overall efficiency in high-frequency applications.
5. Thermal Performance: Supports robust thermal performance due to its design, making it suitable for demanding power applications.
6. Applications: Commonly used in DC-DC converters, synchronous rectification, motor drives, and other power management scenarios.
7. Reliability: Built to offer high reliability and durability in various operational environments.
These features make the CSD18512Q5B a versatile choice for various applications requiring efficient power handling and management.
Pinout
The CSD18512Q5B is a NexFET™ Power MOSFET from Texas Instruments, designed for high-efficiency power conversion applications. It comes in a standard 8-pin SON (Small Outline No-lead) package. The pin configuration is as follows:
1. Pin 1: Gate (G) - Used to drive the transistor.
2. Pin 2: Source (S) - Source terminal of the MOSFET.
3. Pin 3: Source (S) - Source terminal of the MOSFET.
4. Pin 4: Source (S) - Source terminal of the MOSFET.
5. Pin 5: Source (S) - Source terminal of the MOSFET.
6. Pin 6: Source (S) - Source terminal of the MOSFET.
7. Pin 7: Drain (D) - Internally connected to the tab for heat dissipation.
8. Pin 8: Drain (D) - Internally connected to the tab for heat dissipation.
The primary function is to act as a switch or amplifier in electronic circuits, facilitating efficient power management in applications such as DC-DC converters, motor drives, and other high-current applications.
1. Pin 1: Gate (G) - Used to drive the transistor.
2. Pin 2: Source (S) - Source terminal of the MOSFET.
3. Pin 3: Source (S) - Source terminal of the MOSFET.
4. Pin 4: Source (S) - Source terminal of the MOSFET.
5. Pin 5: Source (S) - Source terminal of the MOSFET.
6. Pin 6: Source (S) - Source terminal of the MOSFET.
7. Pin 7: Drain (D) - Internally connected to the tab for heat dissipation.
8. Pin 8: Drain (D) - Internally connected to the tab for heat dissipation.
The primary function is to act as a switch or amplifier in electronic circuits, facilitating efficient power management in applications such as DC-DC converters, motor drives, and other high-current applications.
Manufacturer
The CSD18512Q5B is manufactured by Texas Instruments (TI). Texas Instruments is a global technology company that designs and produces semiconductors and various integrated circuits, which are sold to electronics designers and manufacturers worldwide. The company is well-known for its analog and embedded processing products, which include processors, microcontrollers, and power management chips. TI has a broad portfolio that serves a wide range of industries, including automotive, industrial, personal electronics, communications equipment, and enterprise systems. It is headquartered in Dallas, Texas, and is one of the largest and most influential semiconductor companies in the world.
Application
The CSD18512Q5B is a power MOSFET commonly used in various electronic applications. Its primary application areas include power management systems, DC-DC converters, and load switching. It is also utilized in motor drives, automotive electronic control units, and battery management systems due to its efficiency, reliability, and low on-resistance. The MOSFET's compact package makes it suitable for high-density power applications in consumer electronics, telecommunications, and industrial equipment. Its low gate charge and fast switching capabilities are advantageous in applications requiring rapid and efficient power conversion and management.
Package
The CSD18512Q5B is packaged in a Power QFN (Quad Flat No-lead) package, specifically in a 5 mm x 6 mm outline. This package type is commonly used for efficient thermal and electrical performance, ideal for power MOSFETs.
