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CSD25211W1015
+BOMMOSFET P-CH 20V 3.2A 6DSBGA
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ManufacturerTexas Instruments
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Mfr. Part #CSD25211W1015
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In Stock913
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Specifications
| Attribute | Value |
| Series | NexFET™ |
| PartStatus | Active |
| BaseProductNumber | CSD25211 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3.2A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@Id,Vgs | 33mOhm @ 1.5A, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.1 nC @ 4.5 V |
| Vgs(Max) | -6V |
| InputCapacitance(Ciss)(Max)@Vds | 570 pF @ 10 V |
| PowerDissipation(Max) | 1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-DSBGA (1x1.5) |
| Package | 6-UFBGA, DSBGA |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
