Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 15A |
| RdsOn(Max)@IdVgs | 15mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 3.6V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 18nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1400pF @ 30V |
| Power-Max | 2.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
The CSD88537ND is a dual N-channel MOSFET power stage from Texas Instruments, designed for high-efficiency synchronous buck converters. It integrates two 30V, 60mΩ MOSFETs (one high-side and one low-side) in a compact 5mm × 6mm SON package, optimizing power density and thermal performance.
Key features:
- Low RDS(on): Reduces conduction losses.
- Fast switching: Minimizes transition losses.
- Integrated bootstrap diode: Simplifies design.
- Optimized dead-time: Enhances efficiency.
Ideal for DC-DC converters in computing, telecom, and industrial applications, it supports high-frequency switching (up to 1MHz) and delivers high current (up to 40A per phase). The device also includes thermal protection and is Pb-free/RoHS-compliant.
For detailed specs, refer to the datasheet (SLUSCK3).
Key features:
- Low RDS(on): Reduces conduction losses.
- Fast switching: Minimizes transition losses.
- Integrated bootstrap diode: Simplifies design.
- Optimized dead-time: Enhances efficiency.
Ideal for DC-DC converters in computing, telecom, and industrial applications, it supports high-frequency switching (up to 1MHz) and delivers high current (up to 40A per phase). The device also includes thermal protection and is Pb-free/RoHS-compliant.
For detailed specs, refer to the datasheet (SLUSCK3).
Features
The CSD88537ND is a dual N-channel NexFET power MOSFET module by Texas Instruments, designed for high-efficiency power conversion. Key features:
- Low RDS(on): 1.8 mΩ (per MOSFET at VGS = 10 V) for reduced conduction losses.
- High Current Handling: 60 A continuous (100 A pulsed) per MOSFET.
- Optimized Switching: Low gate charge (Qg = 60 nC) and output capacitance (Coss = 1.1 nF) for fast switching.
- Thermal Performance: Integrated power block with exposed thermal pads for efficient heat dissipation.
- Wide Voltage Range: 40 V drain-to-source (VDS) rating.
- Compact Package: 5 mm × 6 mm SON (DualCool™) for space-constrained designs.
Ideal for synchronous buck converters, motor drives, and high-current DC/DC applications. Combines high efficiency, thermal robustness, and compact form factor.
- Low RDS(on): 1.8 mΩ (per MOSFET at VGS = 10 V) for reduced conduction losses.
- High Current Handling: 60 A continuous (100 A pulsed) per MOSFET.
- Optimized Switching: Low gate charge (Qg = 60 nC) and output capacitance (Coss = 1.1 nF) for fast switching.
- Thermal Performance: Integrated power block with exposed thermal pads for efficient heat dissipation.
- Wide Voltage Range: 40 V drain-to-source (VDS) rating.
- Compact Package: 5 mm × 6 mm SON (DualCool™) for space-constrained designs.
Ideal for synchronous buck converters, motor drives, and high-current DC/DC applications. Combines high efficiency, thermal robustness, and compact form factor.
Pinout
The CSD88537ND is a dual N-channel NexFET power MOSFET module in a 5mm × 6mm SON package. It has 8 pins with the following key functions:
1. Drain (D1, D2) – Pins 1, 2, 6, 7 (internally connected for each MOSFET).
2. Gate (G1, G2) – Pins 3 and 5 (control inputs for each MOSFET).
3. Source (S1, S2) – Pins 4 and 8 (output and return path for each MOSFET).
Designed for high-efficiency synchronous buck converters, it offers low RDS(on) and optimized switching performance. Typical applications include DC-DC power supplies and motor drives.
1. Drain (D1, D2) – Pins 1, 2, 6, 7 (internally connected for each MOSFET).
2. Gate (G1, G2) – Pins 3 and 5 (control inputs for each MOSFET).
3. Source (S1, S2) – Pins 4 and 8 (output and return path for each MOSFET).
Designed for high-efficiency synchronous buck converters, it offers low RDS(on) and optimized switching performance. Typical applications include DC-DC power supplies and motor drives.
Application
The CSD88537ND, a dual N-channel power block MOSFET, is commonly used in:
1. DC-DC Converters – Efficient power conversion in voltage regulators.
2. Motor Drives – Control and power management in brushed/BLDC motors.
3. Power Supplies – High-efficiency designs for servers, telecom, and industrial systems.
4. Automotive Systems – 12V/48V battery management, LED drivers, and ADAS.
5. Synchronous Rectification – Improves efficiency in switching power supplies.
Its compact, thermally enhanced package suits space-constrained, high-current applications.
1. DC-DC Converters – Efficient power conversion in voltage regulators.
2. Motor Drives – Control and power management in brushed/BLDC motors.
3. Power Supplies – High-efficiency designs for servers, telecom, and industrial systems.
4. Automotive Systems – 12V/48V battery management, LED drivers, and ADAS.
5. Synchronous Rectification – Improves efficiency in switching power supplies.
Its compact, thermally enhanced package suits space-constrained, high-current applications.
