Specifications
| Attribute | Value |
| Supplier | CISSOID |
| Package | Tray |
| ProductStatus | Active |
| FETType | 6 N-Channel (3-Phase Bridge) |
| FETFeature | Silicon Carbide (SiC) |
| DraintoSourceVoltage(Vdss) | 1200V (1.2kV) |
| Current-ContinuousDrain(Id)@25°C | 450A |
| RdsOn(Max)@IdVgs | 3.25mOhm @ 300A |
| GateCharge(Qg)(Max)@Vgs | 295nC @ 15V |
| InputCapacitance(Ciss)(Max)@Vds | 30000pF @ 600V |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | Module |
