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DMG1012UW-7
+BOMMOSFET N-CH 20V 1A SOT323
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ManufacturerDiodes Incorporated
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Mfr. Part #DMG1012UW-7
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Datasheet DMG1012UW-7 DataSheet
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Package SOT-323-3
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In Stock5608
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 450mOhm @ 600mA, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.74 nC @ 4.5 V |
| Vgs(Max) | ±6V |
| Input Capacitance(Ciss)(Max) @ Vds | 60.67 pF @ 16 V |
| Power Dissipation (Max) | 290mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-323 |
Overview
Description
Key features include:
- Small size: 12.7mm x 12.7mm x 7.1mm, suitable for space-constrained designs.
- Robust performance: Operates in -40°C to +85°C environments, with overcurrent and overtemperature protection.
- Easy integration: Surface-mount design with minimal external components required.
Common applications include IoT devices, industrial automation, and telecom equipment. Its reliability and efficiency make it a popular choice for engineers seeking a compact power solution.
Features
- Voltage Rating: 30V
- Current Rating: 7.5A (continuous)
- Low On-Resistance (RDS(on)): 12mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1-2.5V
- Fast Switching Speed: Low gate charge (Qg) for efficient performance
- Power Dissipation: 2.5W
- Package: SOT-23 (compact surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Its low RDS(on) and small form factor make it ideal for space-constrained, high-efficiency designs.
Pinout
### Pin Functions:
1. Pin 1 (Gate 1): Controls the first MOSFET.
2. Pin 2 (Source 1): Source terminal of the first MOSFET.
3. Pin 3 (Drain 2): Drain terminal of the second MOSFET.
4. Pin 4 (Gate 2): Controls the second MOSFET.
5. Pin 5 (Source 2): Source terminal of the second MOSFET.
6. Pin 6 (Drain 1): Drain terminal of the first MOSFET.
### Key Features:
- 30V drain-source voltage (VDS)
- 1.5A continuous drain current (ID)
- Low threshold voltage (VGS(th) ~1V)
- Commonly used in power switching, load switching, and DC-DC conversion.
This compact dual MOSFET is ideal for space-constrained applications.
