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DMN3018SSD-13
+BOMMOSFET 2N-CH 30V 6.7A 8SO
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ManufacturerDiodes Incorporated
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Mfr. Part #DMN3018SSD-13
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Datasheet DMN3018SSD-13 DataSheet
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In Stock5830
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Specifications
| Attribute | Value |
| Part Status | Active |
| Base Product Number | DMN3018 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 697pF @ 15V |
| Power - Max | 1.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
Key features of the DMN3018SSD-13 include a low threshold voltage, which allows it to be driven directly from low voltage circuits, and a fast switching speed, making it suitable for high-frequency applications. It is housed in a compact, surface-mount package, which facilitates easy integration into PCB designs. The device also offers good thermal performance and reliability, critical for maintaining efficiency and longevity in power circuits.
Overall, the DMN3018SSD-13 is valued for its balance of performance, size, and cost, making it a popular choice among designers looking to optimize power efficiency and space in their electronic designs.
Equivalent
Features
1. N-Channel MOSFET: It is an N-channel enhancement-mode transistor.
2. Low On-State Resistance: Offers low R_DS(on) for efficient conduction and minimal power loss.
3. Fast Switching Speed: Enables quick transitions between on and off states, benefiting high-frequency applications.
4. Drain-Source Voltage (V_DS): Typically around 30V, suitable for low to medium voltage applications.
5. Continuous Drain Current (I_D): Generally capable of handling significant current, ensuring good performance in demanding circuits.
6. SO-8 Package: Comes in a standard SO-8 package, making it compatible with automated assembly processes.
7. Thermal Efficiency: Designed to handle thermal stress effectively, ensuring reliability under high-power conditions.
8. ESD Protection: Equipped with Electrostatic Discharge protection to enhance durability.
These features make the DMN3018SSD-13 suitable for applications such as DC-DC converters, power management in portable devices, and other high-efficiency power applications.
Pinout
1. Gate (G): This is the control terminal for the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): This terminal is where the current flows out of the MOSFET when it is conducting. It is connected to the load in typical circuit configurations.
3. Source (S): This terminal is the return path for the current flowing through the MOSFET. It is usually connected to ground or a lower potential in the circuit.
These pins allow the MOSFET to function as a switch or amplifier in electronic circuits, controlling the flow of current through the device based on the voltage applied to the gate.
Manufacturer
Application
1. DC-DC Converters: Used in power conversion systems for efficient voltage regulation.
2. Motor Drives: Suitable for driving motors due to its low on-resistance and fast switching capabilities.
3. Load Switching: Ideal for high-frequency load switching applications.
4. Battery Management Systems: Helps in managing charging and discharging cycles efficiently.
5. Power Supplies: Used in power supply circuits to enhance energy efficiency.
6. LED Drivers: Utilized in LED driving circuits for its fast switching and low power loss features.
These characteristics make it suitable for use in compact, high-performance consumer electronics and industrial applications.