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DMP2035UVT-7
+BOMMOSFET P-CH 20V 6A TSOT26
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ManufacturerDiodes Incorporated
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Mfr. Part #DMP2035UVT-7
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In Stock5802
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Specifications
| Attribute | Value |
| Part Status | Active |
| Base Product Number | DMP2035 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 23.1 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 10 V |
| Power Dissipation (Max) | 1.2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSOT-26 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
Its fast switching speed makes it suitable for applications in power supplies, DC-DC converters, motor control, and other demanding electronic systems. The DMP2035UVT-7 comes in a compact SO-8 package, allowing for space-efficient designs. Additionally, it is characterized by robust thermal performance, ensuring reliability under various operational conditions.
This MOSFET is an excellent choice for engineers looking to improve efficiency and performance in their designs while maintaining a low footprint.
Equivalent
Features
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents up to 20A, providing robust performance for various circuits.
3. RDS(on): It offers a low on-resistance (RDS(on)) of around 8.5 mΩ, ensuring minimal power loss and high efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs) is between 1.8V to 2.6V, allowing for efficient control with low drive voltages.
5. Package Type: The MOSFET is available in a compact SO-8 package, facilitating easy integration into space-constrained designs.
6. Fast Switching Speed: It features fast switching capabilities, making it ideal for applications such as power supplies and motor controls.
These features collectively enhance the reliability and performance of power management systems.
Pinout
1. Gate (G): Controls the MOSFET's operation.
2. Drain (D): The output where current flows out.
3. Source (S): The input where current flows in.
4. Body (B): Typically internally connected to the source in most MOSFETs.
The device features low on-resistance and fast switching capabilities, making it suitable for low-voltage applications such as battery management and load switching. Its compact package also enhances its efficiency in space-constrained environments. For specific pin functions, refer to the manufacturer's datasheet.
Manufacturer
Founded in 1959, Diodes has built a reputation for delivering reliable and innovative solutions to meet the needs of diverse markets. The company emphasizes quality and efficiency in its manufacturing processes and has a strong commitment to research and development, continuously expanding its product portfolio. Diodes Incorporated operates globally, with design, manufacturing, and distribution facilities in multiple regions, ensuring they can serve their customers effectively worldwide.