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DMP3056LSD-13
+BOMMOSFET 2P-CH 30V 6.9A 8-SOIC
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ManufacturerDiodes Incorporated
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Mfr. Part #DMP3056LSD-13
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Datasheet DMP3056LSD-13 DataSheet
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Package SOIC-8
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In Stock23758
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Specifications
| Attribute | Value |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 6.9A |
| Rds On(Max) @ Id Vgs | 45mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 13.7nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 722pF @ 25V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
Key features of the DMP3056LSD-13 include low on-resistance, which improves efficiency by reducing power loss during operation, and a fast switching speed, which is essential for applications requiring quick response times. It typically supports low to medium power applications and is often found in consumer electronics, automotive systems, and portable devices.
The device is encapsulated in a standard package, which allows for easy integration into PCBs (Printed Circuit Boards). Its robust design ensures reliability and durability under various operational conditions. The DMP3056LSD-13's characteristics make it suitable for engineers and designers looking to implement efficient power control solutions in their electronic projects.
Equivalent
1. IRF9540N - A P-channel MOSFET with similar voltage and current ratings.
2. FQP27P06 - Offers similar performance characteristics.
3. AO3401 - Another P-channel MOSFET with comparable specifications.
4. SI2333DS - A replacement option with close parameters.
5. BSP250 - Can be considered based on the application requirements.
Ensure to match specific electrical parameters like voltage, current, and package type when selecting equivalents.
Features
1. Low On-Resistance: Provides efficient power switching with minimal energy loss.
2. Compact Package: Housed in a small, lead-free, and RoHS-compliant package suitable for space-constrained applications.
3. High Power Capability: Designed to manage significant power loads, making it ideal for various power management applications.
4. Fast Switching Speed: Enables quick transitions, enhancing performance in high-speed circuits.
5. Thermal Efficiency: Features a design that helps in effective heat dissipation, ensuring reliable operation under thermal stress.
6. Low Gate Charge: Minimizes drive requirements and enhances overall efficiency.
7. Wide Range of Applications: Suitable for use in load switching, power management in portable devices, DC-DC converters, and battery-powered systems.
These attributes make the DMP3056LSD-13 a versatile choice for engineers looking to optimize power management in their electronic designs.
Pinout
1. Gate (G): This pin controls the conductivity of the MOSFET. By applying a voltage to the gate, you can control the flow of current between the source and drain.
2. Source (S): This is the terminal through which the charge carriers (holes for a P-channel MOSFET) enter the transistor. It is usually connected to the higher voltage side in a P-channel MOSFET setup.
3. Drain (D): This is the terminal through which the charge carriers exit the transistor. It is typically connected to the load.
The DMP3056LSD-13 is used for switching and amplification purposes in electronic circuits, commonly utilized in power management applications due to its efficiency and switching speed.