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EFC4C002NLTDG
+BOMPOWER FIELD-EFFECT TRANSISTOR
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ManufacturerFairchild Semiconductor
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Mfr. Part #EFC4C002NLTDG
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Datasheet EFC4C002NLTDG DataSheet
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Package WLCSP-8
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In Stock4834
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Specifications
| Attribute | Value |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Vgs(th)(Max) @ Id | 2.2V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 45nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 6200pF @ 15V |
| Power - Max | 2.6W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
Equivalent
Features
Pinout
The pins usually include:
1. Gate (G): Controls the conductivity between the drain and source.
2. Drain (D): Current flows from the drain to the source when the device is on.
3. Source (S): The source of electrons in an N-channel MOSFET or holes in a P-channel MOSFET.
4. Body (B): Sometimes internally connected to the source to prevent latch-up.
For precise details, including the exact pin count and configuration, it is best to refer to the official datasheet provided by the manufacturer. This document provides comprehensive details regarding the pin functions, electrical characteristics, and typical applications.
Manufacturer
Application
1. Power Management: Used in power supply circuits for voltage regulation and efficient power distribution.
2. Motor Control: Facilitates smooth operation and control in motor drivers for industrial and consumer appliances.
3. Switching Circuits: Operates as a switch in high-speed switching applications, including DC-DC converters.
4. Load Switches: Functions in electronic devices for controlling power to loads, ensuring energy conservation.
5. Amplifiers: Utilized in audio and RF amplifier circuits for signal processing.
These applications leverage the MOSFET's efficiency and reliability in electronic circuit designs.