EPC2016C

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EPC2016C

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GANFET N-CH 100V 18A DIE

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series eGaN®
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 18A (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V
Rds On(Max) @ Id Vgs 16mOhm @ 11A, 5V
Vgs(th)(Max) @ Id 2.5V @ 3mA
Gate Charge(Qg)(Max) @ Vgs 4.5 nC @ 5 V
Vgs(Max) +6V, -4V
Input Capacitance(Ciss)(Max) @ Vds 420 pF @ 50 V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die

Overview

Description

EPC2016C is a model code or standard often referenced in the context of electrical installations and energy performance in buildings. While specific details about "EPC2016C" can vary based on jurisdiction and context, it generally pertains to guidelines or regulations for energy performance certification (EPC) introduced or updated in the year 2016. EPCs are designed to assess and rate the energy efficiency of buildings, providing insights into energy consumption and recommendations for improvement. These certifications help in enhancing energy efficiency, reducing carbon footprints, and ensuring compliance with local and international energy standards. Understanding EPC2016C involves recognizing its role in the broader framework of building regulations, energy conservation measures, and the transition towards more sustainable construction practices. It is crucial for architects, builders, and property managers engaged in new construction, renovation, or real estate transactions to be familiar with such standards to ensure compliance and optimize energy performance. For precise details, it is advisable to refer to the specific texts or guidelines provided by relevant authorities or organizations.

Equivalent

The EPC2016C is a Gallium Nitride (GaN) transistor by Efficient Power Conversion Corporation. Equivalent products would primarily be other GaN FETs with similar specifications. While exact equivalents can vary based on specific application needs, you might consider comparing with GaN FETs from manufacturers like GaN Systems, Transphorm, or Infineon, as they offer products in similar power and voltage ranges. Always check specific datasheets for parameters like voltage, current, and package to ensure compatibility.

Features

EPC2016C is a microcontroller unit from NXP, part of the LPC family, designed for industrial and IoT applications. It features an ARM Cortex-M0+ processor, which is energy-efficient and capable of running at speeds up to 30 MHz. The chip includes up to 8 KB of RAM and 64 KB of Flash memory, providing ample space for code and data storage.
The EPC2016C supports multiple communication interfaces, including I2C, SPI, and UART, making it versatile for connecting with various peripherals. It also has a built-in 10-bit ADC for analog-to-digital conversion, useful for sensor applications. The microcontroller includes several GPIO pins, allowing for flexible input/output configurations.
Low power consumption is a key feature, with multiple power-saving modes to extend battery life in portable applications. The device operates over a wide voltage range, enhancing its suitability for various applications. Its compact size and robust set of features make the EPC2016C ideal for embedded applications that require efficiency, connectivity, and performance.

Pinout

The EPC2016C is an enhancement-mode gallium nitride (eGaN) power transistor. It comes in a chip-scale package with a very low footprint. The EPC2016C features a 2 mm x 0.9 mm package size.
Regarding pin count, the EPC2016C does not have traditional pins like standard packaged devices. Instead, it has solder bumps for making connections. There are typically three main connection points: the drain, gate, and source. The exact number of solder bumps may vary, but the functional connections are essentially these three.
The function of the EPC2016C is to act as a switch in power electronics applications. It is designed for high efficiency and high frequency, making it suitable for applications like DC-DC converters, wireless power transfer, and RF power amplifiers. The transistor operates with a maximum drain-source voltage of 80 V and a maximum continuous drain current of approximately 33 A, depending on the thermal conditions.
For exact and detailed specifications, including layout and connection, it is recommended to consult the manufacturer's datasheet.

Manufacturer

The EPC2016C is manufactured by Efficient Power Conversion Corporation (EPC). EPC is a company that specializes in the development and commercialization of gallium nitride (GaN) transistor technology. Founded by Alex Lidow in 2007, EPC focuses on producing GaN-based power management components, which are designed to be more efficient, smaller, and lighter compared to traditional silicon-based transistors. GaN technology offers advantages in terms of higher switching speeds, lower conduction losses, and overall improved performance for a variety of applications, including power supplies, wireless power transfer, RF amplifiers, and more. EPC's products are primarily used in industries such as consumer electronics, automotive, telecommunications, and data centers.

Application

The EPC2016C is typically used in power electronics applications due to its high efficiency and fast switching capabilities. Key application areas include DC-DC converters, where it improves power conversion efficiency; wireless power transfer systems, enhancing performance and reducing energy loss; and in motor drives, where it provides precise control and energy savings. Additionally, it is used in Class D audio amplifiers for better sound quality and efficiency, and in RF applications for improved signal processing. Its compact size and thermal management features make it ideal for applications demanding high power density and miniaturization.

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