FBG04N30BC

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FBG04N30BC

+BOM

GAN FET HEMT 40V30A COTS 4FSMD-B

  • ManufacturerEPC Space, LLC

  • Mfr. Part #FBG04N30BC

  • In Stock62

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Specifications

Attribute Value
Supplier EPC Space
Package / Case Tray
Series FSMD-B
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 30A (Tc)
Drive Voltage(Max Rds On Min Rds On) 5V
Rds On(Max) @ Id Vgs 9mOhm @ 30A, 5V
Vgs(th)(Max) @ Id 2.5V @ 9mA
Gate Charge(Qg)(Max) @ Vgs 11.4 nC @ 5 V
Vgs(Max) +6V, -4V
Input Capacitance(Ciss)(Max) @ Vds 1300 pF @ 20 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-SMD

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