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FCD850N80Z
+BOMMOSFET N-CH 800V 6A DPAK
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Manufactureronsemi
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Mfr. Part #FCD850N80Z
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Datasheet FCD850N80Z DataSheet
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In Stock6376
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Specifications
| Attribute | Value |
| Series | SuperFET® II |
| PartStatus | Active |
| BaseProductNumber | FCD850 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 850mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 600µA |
| GateCharge(Qg)(Max)@Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1315 pF @ 100 V |
| PowerDissipation(Max) | 75W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
| Package | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
The FCD850N80Z is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor), designed for high-efficiency energy management in industrial applications. It combines the benefits of MOSFETs and bipolar transistors, offering high input impedance and low on-state voltage drop, which enhances performance in high-voltage and high-current environments. The FCD850N80Z is particularly effective in applications like motor drives, inverters, and power supplies due to its fast switching capabilities and robust construction. It features advanced trench gate and field-stop technology, which help in minimizing switching losses and improving efficiency. This IGBT is also equipped with a low saturation voltage, ensuring reduced power dissipation during operation. Its compact design facilitates integration into various systems, making it a versatile choice for engineers looking to optimize power efficiency. With robust thermal performance and a high breakdown voltage typically around 800V, the FCD850N80Z is a reliable component for demanding industrial applications.
Equivalent
The FCD850N80Z is a high-voltage N-channel MOSFET. Equivalent products include:
1. STMicroelectronics STP80NF10
2. Infineon Technologies IPP80N10S3-04
3. Vishay Siliconix SiHP80N10E
4. ON Semiconductor FDPF80N10
These equivalents offer similar voltage and current ratings, making them suitable replacements in most applications. However, always verify the specific performance characteristics and pin configurations to ensure compatibility.
1. STMicroelectronics STP80NF10
2. Infineon Technologies IPP80N10S3-04
3. Vishay Siliconix SiHP80N10E
4. ON Semiconductor FDPF80N10
These equivalents offer similar voltage and current ratings, making them suitable replacements in most applications. However, always verify the specific performance characteristics and pin configurations to ensure compatibility.
Features
The FCD850N80Z is a high-performance IGBT (Insulated Gate Bipolar Transistor) known for its efficiency in power electronics applications. Key features of this component include:
1. Current Rating: It typically supports a collector current of around 850A, making it suitable for high-power applications.
2. Voltage Rating: The device is designed to handle a collector-emitter voltage of approximately 800V, allowing for use in medium to high voltage scenarios.
3. Switching Speed: The FCD850N80Z offers fast switching capabilities, which helps reduce energy loss and improve overall system efficiency.
4. Low Saturation Voltage: It features a low saturation voltage drop, which minimizes power dissipation and enhances performance.
5. Thermal Performance: This IGBT is equipped with excellent thermal management properties, often including features like a low thermal resistance package.
6. Ruggedness and Reliability: It is built to withstand harsh operating conditions, offering robustness and long-term reliability.
These attributes make the FCD850N80Z ideal for use in applications like motor drives, inverters, and other high power switching operations.
1. Current Rating: It typically supports a collector current of around 850A, making it suitable for high-power applications.
2. Voltage Rating: The device is designed to handle a collector-emitter voltage of approximately 800V, allowing for use in medium to high voltage scenarios.
3. Switching Speed: The FCD850N80Z offers fast switching capabilities, which helps reduce energy loss and improve overall system efficiency.
4. Low Saturation Voltage: It features a low saturation voltage drop, which minimizes power dissipation and enhances performance.
5. Thermal Performance: This IGBT is equipped with excellent thermal management properties, often including features like a low thermal resistance package.
6. Ruggedness and Reliability: It is built to withstand harsh operating conditions, offering robustness and long-term reliability.
These attributes make the FCD850N80Z ideal for use in applications like motor drives, inverters, and other high power switching operations.
Pinout
The FCD850N80Z is a high-voltage power MOSFET, typically used in applications such as power supply units and high-efficiency power converters. It comes in a TO-247 package, which usually has three pins. The pin count and functions for the FCD850N80Z are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the user can turn the MOSFET on or off.
2. Drain (D): This pin is where the high voltage enters the MOSFET. It is connected to the load that the MOSFET is controlling.
3. Source (S): This is the pin connected to the ground or return path of the circuit. It completes the circuit when the MOSFET is turned on.
These pins enable the MOSFET to function as a switch or amplifier in various electronic circuits, handling high voltage and power levels efficiently.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the user can turn the MOSFET on or off.
2. Drain (D): This pin is where the high voltage enters the MOSFET. It is connected to the load that the MOSFET is controlling.
3. Source (S): This is the pin connected to the ground or return path of the circuit. It completes the circuit when the MOSFET is turned on.
These pins enable the MOSFET to function as a switch or amplifier in various electronic circuits, handling high voltage and power levels efficiently.
Manufacturer
The FCD850N80Z is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading semiconductor supplier that designs and manufactures a wide range of semiconductor components. The company specializes in power and signal management, logic, discrete, and custom devices for various applications, including automotive, industrial, communications, computing, and consumer electronics. onsemi is known for its focus on energy-efficient innovations, enabling the development of smart technology for a more sustainable future.
Application
The FCD850N80Z is a high-performance power MOSFET commonly used in various applications. Its primary uses include:
1. Power Supply Units: Utilized for efficient power conversion in AC-DC and DC-DC converters.
2. Motor Drives: Suitable for controlling motors in industrial and automotive settings.
3. Inverters: Employed in inverters for renewable energy systems like solar inverters.
4. Switching Applications: Ideal for high-speed switching in electronic circuits.
5. Industrial Equipment: Used in robotic systems and automation for precise control.
6. Electric Vehicles: Integrates into power management systems for electric and hybrid vehicles.
These applications capitalize on the FCD850N80Z's ability to handle high voltages and currents efficiently.
1. Power Supply Units: Utilized for efficient power conversion in AC-DC and DC-DC converters.
2. Motor Drives: Suitable for controlling motors in industrial and automotive settings.
3. Inverters: Employed in inverters for renewable energy systems like solar inverters.
4. Switching Applications: Ideal for high-speed switching in electronic circuits.
5. Industrial Equipment: Used in robotic systems and automation for precise control.
6. Electric Vehicles: Integrates into power management systems for electric and hybrid vehicles.
These applications capitalize on the FCD850N80Z's ability to handle high voltages and currents efficiently.
Package
The FCD850N80Z is an IGBT (Insulated Gate Bipolar Transistor) module. It typically comes in a high-power package designed for applications requiring efficient and reliable switching, often used in inverters and motor drives. The specific package details would depend on the manufacturer's datasheet for the exact dimensions and pin configurations.
