Specifications
| Attribute | Value |
| Package / Case | Tube |
| Series | SuperFET® II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 20.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 190mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 82 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3175 pF @ 25 V |
| Power Dissipation (Max) | 39W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
Overview
Description
The FCPF190N60E is a power semiconductor device, specifically an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed to handle high power requirements, making it suitable for a variety of applications in power electronics. This MOSFET is known for its efficiency and reliability, featuring a high-speed switching capability and a low on-resistance, which minimizes power loss and improves overall performance.
The key specifications of the FCPF190N60E include a voltage rating of 600V and a continuous current rating of 190A, allowing it to handle substantial power levels. It is often used in applications such as power supplies, motor drives, and other systems requiring efficient power management.
The device is typically packaged in a TO-247 case, which facilitates heat dissipation and easy integration into electronic assemblies. The FCPF190N60E is valued for its ability to operate under demanding conditions, providing both robustness and efficiency in power conversion tasks.
The key specifications of the FCPF190N60E include a voltage rating of 600V and a continuous current rating of 190A, allowing it to handle substantial power levels. It is often used in applications such as power supplies, motor drives, and other systems requiring efficient power management.
The device is typically packaged in a TO-247 case, which facilitates heat dissipation and easy integration into electronic assemblies. The FCPF190N60E is valued for its ability to operate under demanding conditions, providing both robustness and efficiency in power conversion tasks.
Equivalent
The FCPF190N60E is a 600V, 19A, N-channel SuperFET II MOSFET by ON Semiconductor. Equivalent products with similar specifications may include:
1. Infineon IPP60R190P6 - 600V, 19A, CoolMOS Power Transistor.
2. STMicroelectronics STW19NM60N - 600V, 19A, N-channel MOSFET.
3. Vishay SiHP19N60E - 600V, 19A, N-channel MOSFET.
4. Fairchild FDP18N50 - 500V, 18A, N-channel MOSFET.
Ensure compatibility with your specific application requirements before substituting.
1. Infineon IPP60R190P6 - 600V, 19A, CoolMOS Power Transistor.
2. STMicroelectronics STW19NM60N - 600V, 19A, N-channel MOSFET.
3. Vishay SiHP19N60E - 600V, 19A, N-channel MOSFET.
4. Fairchild FDP18N50 - 500V, 18A, N-channel MOSFET.
Ensure compatibility with your specific application requirements before substituting.
Features
The FCPF190N60E is a power MOSFET designed for high-efficiency switching applications. Some of its key features include:
1. N-Channel MOSFET: This is a type of MOSFET that conducts when a positive voltage is applied to the gate relative to the source.
2. Maximum Voltage: It can handle a drain-source voltage (V_DS) of up to 600V.
3. Current Capacity: Capable of carrying a continuous drain current (I_D) of up to 190A.
4. Low On-State Resistance: It features a low R_DS(on), which reduces conduction losses and enhances efficiency.
5. Fast Switching Speed: Its design allows for rapid switching, which is critical for high-frequency applications like switch-mode power supplies.
6. High Energy Efficiency: Optimized for low power loss and high energy efficiency.
7. Thermal Performance: Includes features for effective heat dissipation to maintain performance even at high currents.
This MOSFET is often used in applications such as power converters, inverters, and motor controls due to its robust performance and reliability.
1. N-Channel MOSFET: This is a type of MOSFET that conducts when a positive voltage is applied to the gate relative to the source.
2. Maximum Voltage: It can handle a drain-source voltage (V_DS) of up to 600V.
3. Current Capacity: Capable of carrying a continuous drain current (I_D) of up to 190A.
4. Low On-State Resistance: It features a low R_DS(on), which reduces conduction losses and enhances efficiency.
5. Fast Switching Speed: Its design allows for rapid switching, which is critical for high-frequency applications like switch-mode power supplies.
6. High Energy Efficiency: Optimized for low power loss and high energy efficiency.
7. Thermal Performance: Includes features for effective heat dissipation to maintain performance even at high currents.
This MOSFET is often used in applications such as power converters, inverters, and motor controls due to its robust performance and reliability.
Pinout
The FCPF190N60E is a power MOSFET, typically used for high-efficiency switching applications. It is part of Fairchild Semiconductor's SuperFET II series, characterized by low on-resistance and fast switching capabilities.
The FCPF190N60E comes in a TO-220 package, which generally includes three pins. The primary functions of these pins are:
1. Gate (G): This pin is used to receive the voltage that controls the MOSFET's switching operation. By applying a voltage to the gate, the MOSFET is turned on or off, controlling the current flow between the drain and source.
2. Drain (D): The drain is the terminal where the load current enters. In a typical application, this pin is connected to the power supply.
3. Source (S): The source is the terminal through which the current exits the MOSFET. It is usually connected to the ground or the return path of the circuit.
These pins allow the FCPF190N60E to function effectively as a switch or amplifier in various electronic circuits.
The FCPF190N60E comes in a TO-220 package, which generally includes three pins. The primary functions of these pins are:
1. Gate (G): This pin is used to receive the voltage that controls the MOSFET's switching operation. By applying a voltage to the gate, the MOSFET is turned on or off, controlling the current flow between the drain and source.
2. Drain (D): The drain is the terminal where the load current enters. In a typical application, this pin is connected to the power supply.
3. Source (S): The source is the terminal through which the current exits the MOSFET. It is usually connected to the ground or the return path of the circuit.
These pins allow the FCPF190N60E to function effectively as a switch or amplifier in various electronic circuits.
Manufacturer
The FCPF190N60E is manufactured by ON Semiconductor, a company known for designing and producing a variety of semiconductor components used in electronic systems and devices. ON Semiconductor, now operating under the name onsemi, specializes in power and signal management, logic, discrete, and custom devices for various applications. These applications span automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power supply markets. The company emphasizes energy-efficient solutions and has a wide range of products that support advanced technologies and help reduce energy consumption.
Application
The FCPF190N60E is a power MOSFET designed for high-efficiency applications. It is commonly used in:
1. Power Supply Units: Often utilized in servers and telecommunications to enhance efficiency and power density.
2. Motor Drives: Suitable for industrial motor control systems where high-speed and reliable performance is required.
3. Renewable Energy Systems: Deployed in solar inverters for converting DC to AC with minimal loss.
4. Uninterruptible Power Supplies (UPS): Ensures continuous power delivery by efficiently switching between power sources.
5. Automotive Applications: Used in electric and hybrid vehicles for power management and conversion tasks.
These areas leverage the MOSFET's low conduction losses and fast switching capabilities.
1. Power Supply Units: Often utilized in servers and telecommunications to enhance efficiency and power density.
2. Motor Drives: Suitable for industrial motor control systems where high-speed and reliable performance is required.
3. Renewable Energy Systems: Deployed in solar inverters for converting DC to AC with minimal loss.
4. Uninterruptible Power Supplies (UPS): Ensures continuous power delivery by efficiently switching between power sources.
5. Automotive Applications: Used in electric and hybrid vehicles for power management and conversion tasks.
These areas leverage the MOSFET's low conduction losses and fast switching capabilities.
Package
The FCPF190N60E is a MOSFET in a TO-220 package type.
